POCl₃ diffusion for industrial Si solar cell emitter formation

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• 作者：Hongzhao Li ; Kyung Kim ; Brett Hallam ; Bram Hoex ; Stuart Wenham…
• 关键词：POCl3 diffusion ; emitter recombination ; oxidation ; silicon
• 刊名：Frontiers in Energy
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：11
• 期：1
• 页码：42-51
• 全文大小：398 KB
• 刊物类别：Engineering
• 刊物主题：Chinese Library of Science
  Energy Technology
  
• 出版者：Higher Education Press, co-published with Springer-Verlag GmbH
• ISSN：2095-1698
• 卷排序：11

文摘

POCl₃ diffusion is currently the de facto standard method for industrial n-type emitter fabrication. In this study, we present the impact of the following processing parameters on emitter formation and electrical performance: deposition gas flow ratio, drive-in temperature and duration, drive-in O₂ flow rate, and thermal oxidation temperature. By showing their influence on the emitter doping profile and recombination activity, we provide an overall strategy for improving industrial POCl₃ tube diffused emitters.