Structure and dielectric properties of 80%Pb(Zn1/3Nb2/3)O3-0%PbTiO3 thin films prepared by modified sol–gel process
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- 作者：Chuanqing Li (1)
Aiyun Liu (1) liuaiyun2000@163.com
Junqiang Shi (1)
Yafei Ruan (1)
Lei Huang (1)
Wangzhou Shi (1)
Xiangjian Meng (2)
Jinglan Sun (2)
Junhao Chu (2)
Xiaodong Zhang (3) - 关键词：PZN–PT – Ferroelectric thin film – Modified sol–gel process
- 刊名：Journal of Sol-Gel Science and Technology
- 出版年：2011
- 出版时间：November 2011
- 年：2011
- 卷：60
- 期：2
- 页码：164-169
- 全文大小：1.8 MB
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- 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Ceramics,Glass,Composites,Natural Materials
Inorganic Chemistry
Optical and Electronic Materials
Nanotechnology - 出版者：Springer Netherlands
- ISSN：1573-4846
文摘
80%Pb(Zn1/3Nb2/3)O3–20%PbTiO3 (PZN–PT) thin films have been prepared on Pt/Ti/SiO2/Si substrates using a modified sol–gel method. In our method, niobium pentaoxide is used as a substitution instead of niobium ethoxide which is moisture-sensitivity and much more expensive. Microstructure and electrical properties of PZN–PT thin films have been investigated. X-ray diffraction analysis shows that proper annealing temperature of PZN–PT thin films is 600 °C. The PZN–PT thin films annealed at 600 °C are polycrystalline with (111)-preferential orientations. Field-emissiom scanning electron microscope analysis revealed PZN–PT thin films possess well-defined and crack-free microstructure. The thickness of thin films is 290 nm. The Pt/PZN–PT/Pt capacitors have been fabricated and it presents ferroelectric nature. The remanent polarization (Pr), spontaneous polarization (Ps), and the coercive electric field (Ec) are 8.71 μC/cm2, 43.06 μC/cm2, and 109 kV/cm at 1 MHz, respectively. The dielectric constant (εr) and the dissipation factor (tan δ) are about 500.3 and 0.1 at 1 kHz, respectively.