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作者单位:Anh-Tuan Hoang (1) Thi-Thu-Trang Tran (2) Duc-Anh Le (3)
1. Institute of Physics, Vietnam Academy of Science and Technology, 10 Dao Tan, Hanoi, Vietnam 2. Ha Long University, Nam Khe, Uong Bi, Quang Ninh, Vietnam 3. Faculty of Physics, Hanoi National University of Education, Xuan Thuy 13, Hanoi, Vietnam
刊物主题:Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
出版者:Springer Netherlands
ISSN:1976-8524
文摘
We investigate the Mott metal-insulator transition in the asymmetric Hubbard model, which may describe the ground states of fermionic atoms trapped in optical lattices. We use the dynamical mean-field theory and the equation of motion approach to calculate the density of states at the Fermi level and the double occupation for various values of the on-site interaction U and the hopping asymmetry r. The critical interaction is also obtained as a function of the hopping asymmetry. Our results are in good agreement with the ones obtained by using the dynamical mean field theory with the exact diagonalization and the quantum Monte Carlo techniques. Keywords Metal-insulator transition Asymmetric Hubbard model Equation of motion approach