Effect of crystallinity on the resistive switching behavior of HfAlO x films

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• 作者：In-Su Mok (1)
  Jonggi Kim (1)
  Kyumin Lee (1)
  Youngjae Kim (1)
  Hyunchul Sohn (1)
  Hyoungsub Kim (2)
  
• 关键词：Resistive switching ; Grain boundary ; Crystallinity
• 刊名：Journal of the Korean Physical Society
• 出版年：2014
• 出版时间：February 2014
• 年：2014
• 卷：64
• 期：3
• 页码：419-423
• 全文大小：454 KB
• 参考文献：1. D. H. Kwon, K. M. Kim, J. H. Jang, J. M. Jeon, M. H. Lee, G. H. Kim, X. S. Li, G. S. Park, B. Lee, S. Han, M. Kim and C. S. Hwang, Nature Nanotech. 5, 148 (2010). f="http://dx.doi.org/10.1038/nnano.2009.456" target="_blank" title="It opens in new window">CrossRef
  2. K. L. Lin, T. H. Hou, J. Shieh, J. H. Lin, C. T. Chou and Y. J. Lee, J. Appl. Phys. 109, 084104 (2011). f="http://dx.doi.org/10.1063/1.3567915" target="_blank" title="It opens in new window">CrossRef
  3. D. Lee, H. Choi, H. Sim, D. Choi, H. Hwang, M. J. Lee, S. A. Seo and I.K. Yoo, IEEE Electron Device Lett. 26, 900 (2005). f="http://dx.doi.org/10.1109/LED.2005.859625" target="_blank" title="It opens in new window">CrossRef
  4. S. Seo, M. J. Lee, D. H. Seo, S. K. Choi, D. S. Suh, Y. S. Joung, I. K. Yoo, I. S. Byun, I. R. Hwang, S. H. Kim and B. H. Park, Appl. Phys. Lett. 86, 093509 (2005). f="http://dx.doi.org/10.1063/1.1872217" target="_blank" title="It opens in new window">CrossRef
  5. P. Gonon, M. Mougenot, C. Vall茅e, C. Jorel, V. Jousseaume, H. Grampeix and F. El Kamel, J. Appl. Phy. 107, 0074507 (2010). f="http://dx.doi.org/10.1063/1.3357283" target="_blank" title="It opens in new window">CrossRef
  6. B. Sun, L. Liu, N. Xu, B. Gao, Y. Wang, D. Han, X. Liu, R. Han and J. Kang, Jpn. J. Appl. Phys. 48, 04C061 (2009).
  7. S. W. Jeong, H. J. Lee, K. S. Kim, M. T. You, Y. Roh, T. Noguchi, W. Xianyu and J. Jung. Thin Solid Films 515, 526 (2006). f="http://dx.doi.org/10.1016/j.tsf.2005.12.288" target="_blank" title="It opens in new window">CrossRef
  8. M. lanza, K. Zhang, M. Porti, M. Nafria, Z. Y. Shen, L. F. Liu, J. F. Kang, D. Gilmer and G. Bersuker, Appl. Phys. Lett. 100, 123508 (2012). f="http://dx.doi.org/10.1063/1.3697648" target="_blank" title="It opens in new window">CrossRef
  9. R. A. De Souza, M. J. Pietrowski, U. Anselmi- Tamburini, S. Kim, Z. A. Munir and M. Martin, Phys. Chem. Chem. Phys. 10, 2067 (2008). f="http://dx.doi.org/10.1039/b719363g" target="_blank" title="It opens in new window">CrossRef
  10. G. Knoner, K. Reimann, R. Rower, U. Sodervall and H. E. Schaefer, Proc. Natl. Acad. Sci. U.S.A. 100, 3870 (2003). f="http://dx.doi.org/10.1073/pnas.0730783100" target="_blank" title="It opens in new window">CrossRef
  11. G. Bersuker, J. Yum, V. Iglesias, M. Porti, M. Nafria, K. Mckenna, A. Shluger, P. Kirsch and R. Jammy, Solid-State Electronics 65, 146 (2011). f="http://dx.doi.org/10.1016/j.sse.2011.06.031" target="_blank" title="It opens in new window">CrossRef
  12. D. S. Shang, L. D. Chen, Q. Wang, W. D. Yu, X. M. Li, J. R. Sun and B. G. Shen, J. Appl. phys. 105, 063511 (2009). f="http://dx.doi.org/10.1063/1.3082762" target="_blank" title="It opens in new window">CrossRef
  13. J. Aarik, A. Aidla, A. A. Kiisler, T. Uustare, and V. Sammelselg, Thin Solid Films 340, 110 (1999). f="http://dx.doi.org/10.1016/S0040-6090(98)01356-X" target="_blank" title="It opens in new window">CrossRef
  14. H. Y. Yu, N. Wu, M. F. Li, C Zhu, B. J. Cho, D. L. Kwong, C. H. Tung, J. S. Pan, J. W. Chai, W. D. Wang, D. Z. Chi, C. H. Ang, J. Z. Zheng and S. Ramanathan, Appl. Phys. Lett. 81, 3618 (2002). f="http://dx.doi.org/10.1063/1.1519733" target="_blank" title="It opens in new window">CrossRef
  15. R. C. Garvle J. Phys. Chem. 82, 218 (1978). f="http://dx.doi.org/10.1021/j100491a016" target="_blank" title="It opens in new window">CrossRef
  16. Y. Yang, W Zhu, T. P. Ma and S. Stemmer, J. Appl. Phys. 95, 3772 (2004). f="http://dx.doi.org/10.1063/1.1652240" target="_blank" title="It opens in new window">CrossRef
  17. K. Mckenna, A. Shluger, V. Iglesias, M. Porti, M. Nafria, M. Lanza, and G. Bersuker, Microelect Eng. 88, 1272 (2011). f="http://dx.doi.org/10.1016/j.mee.2011.03.024" target="_blank" title="It opens in new window">CrossRef
  18. W. J. Zhu, T. Tamagawa, M. Gibson, T. Furukawa, and T. P. Ma, IEEE Electron Device Lett. 23, 649 (2002). f="http://dx.doi.org/10.1109/LED.2002.805000" target="_blank" title="It opens in new window">CrossRef
  19. R. Waser and M. Aono, Natrue Mater. 6, 833 (2007). f="http://dx.doi.org/10.1038/nmat2023" target="_blank" title="It opens in new window">CrossRef
  20. K. Mckenna and A. Shluger, Appl. Phys. Lett. 95, 222111 (2009). f="http://dx.doi.org/10.1063/1.3271184" target="_blank" title="It opens in new window">CrossRef
  
• 作者单位：In-Su Mok (1)
  Jonggi Kim (1)
  Kyumin Lee (1)
  Youngjae Kim (1)
  Hyunchul Sohn (1)
  Hyoungsub Kim (2)
  
  1. Department of Materials Science and Engineering, Yonsei University, Seoul, 120-749, Korea
  2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Korea
  
• ISSN：1976-8524

文摘

In this work, we investigated the effect of the Al2O3 cyclic ratio and the annealing temperature on the crystallinity and the resistive switching behavior of HfO2 and HfAlO x cells. The microstructures of the HfO2 and the HfAlO x films were measured by using X-ray diffraction and transmission electron microscopy in order to observe the dependencies of the electro-forming and resistive switching behaviors on the crystallinity. The formation of grain boundaries in connection with a microstructural change from an amorphous to a poly-crystalline phase is expected to be responsible for the leakage current and for the formation of conductive path formation.