Low Thermal Conductivity and High Thermoelectric Performance in Inclass="a-plus-plus">4Seclass="a-plus-plus">3−class="a-plus-plus">x with Phase-Separated Indium Inclusions
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- 作者：Pankaj Kumar Rawat ; Hwanjoo Park ; Junphil Hwang…
- 关键词：Thermal conductivity ; thermoelectrics ; inclusions
- 刊名：Journal of Electronic Materials
- 出版年：2017
- 出版时间：March 2017
- 年：2017
- 卷：46
- 期：3
- 页码：1444-1450
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials; Electronics and Microelectronics, Instrumentation; Solid State Physics;
- 出版者：Springer US
- ISSN：1543-186X
- 卷排序：46
文摘
We report the thermoelectric properties of undoped hot-pressed In4Se3−class="EmphasisTypeItalic ">x (x = 0.05). Stoichiometric imbalance due to selenium deficiency in In4Se3 was found to create a secondary phase of elemental indium in the host material. Heat treatment drove grain growth and increased the indium solubility in In4Se3. Indium-rich domains at grain surfaces/boundaries in untreated samples were found to redistribute inside the grains and their junctions after heat treatment. Due to enhanced phonon scattering by secondary phase of indium, very low values of thermal conductivity were observed for all samples, leading to a maximum thermoelectric figure of merit (zT) of 1.13 at 723 K along the hot-pressing direction for the heat-treated sample.