Growth and optical properties of In x Ga1−x P nanowires synthesized by selective-area epitaxy
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- 作者：Alexander Berg ; Philippe Caroff ; Naeem Shahid ; Mark N. Lockrey…
- 关键词：nanowire ; InGaP ; selective ; area epitaxy ; cathodoluminescence ; energy ; dispersive X ; ray spectroscopy
- 刊名：Nano Research
- 出版年：2017
- 出版时间：February 2017
- 年：2017
- 卷：10
- 期：2
- 页码：672-682
- 全文大小：
- 刊物类别：Chemistry and Materials Science
- 刊物主题：Nanotechnology; Materials Science, general; Atomic/Molecular Structure and Spectra; Condensed Matter Physics; Biotechnology; Biomedicine, general;
- 出版者：Tsinghua University Press
- ISSN：1998-0000
- 卷排序：10
文摘
Ternary III–V nanowires (NWs) cover a wide range of wavelengths in the solar spectrum and would greatly benefit from being synthesized as position-controlled arrays for improved vertical yield, reproducibility, and tunable optical absorption. Here, we report on successful selective-area epitaxy of metal-particle-free vertical InxGa1−xP NW arrays using metal–organic vapor phase epitaxy and detail their optical properties. A systematic growth study establishes the range of suitable growth parameters to obtain uniform NW growth over a large array. The optical properties of the NWs were characterized by room-temperature cathodoluminescence spectroscopy. Tunability of the emission wavelength from 870 nm to approximately 800 nm was achieved. Transmission electron microscopy and energy dispersive X-ray measurements performed on cross-section samples revealed a pure wurtzite crystal structure with very few stacking faults and a slight composition gradient along the NW growth axis.