Quantum analysis based extraction of frequency dependent intrinsic and extrinsic parameters for GEWE-SiNW MOSFET

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• 作者：Neha Gupta ; Rishu Chaujar
• 关键词：Extrinsic and intrinsic parameters ; Gate electrode workfunction engineering (GEWE) ; Quantum models ; Silicon nanowire (SiNW) ; Z and Y parameters ; Modeling
• 刊名：Journal of Computational Electronics
• 出版年：2017
• 出版时间：March 2017
• 年：2017
• 卷：16
• 期：1
• 页码：61-73
• 全文大小：
• 刊物类别：Engineering
• 刊物主题：Appl.Mathematics/Computational Methods of Engineering; Electrical Engineering; Theoretical, Mathematical and Computational Physics; Optical and Electronic Materials; Mechanical Engineering;
• 出版者：Springer US
• ISSN：1572-8137
• 卷排序：16

文摘

This paper examines the bias-independent and bias-dependent extrinsic and intrinsic parameters of the gate electrode workfunction engineered (GEWE) silicon nanowire (SiNW) metal–oxide–semiconductor field-effect transistor (MOSFET) by considering quantum effects. The results reveal that the effect of extrinsic parameters such as the resistance, capacitance, and inductance of the electrodes is less pronounced in the GEWE-SiNW compared with the conventional SiNW or conventional MOSFET. The intrinsic transconductance of the GEWE-SiNW device can be further improved by tuning the gate metal workfunction difference, which results in shorter time constant and lower parasitic capacitance, making it suitable for radiofrequency integrated circuit (RFIC) design. It is also observed that, in the saturation region, the device exhibits improved transconductance and noticeable reduction in \(C_{\mathrm{sdx}}\) [due to drain-induced barrier lowering (DIBL)] but the parasitic capacitance and time constant also reduce. In addition, a non-quasi-static small-signal model has been studied in terms of Z and Y parameters; the results show good agreement with the results of three-dimensional (3D) simulations at thousands of GHz.