Crystallization and activation of silicon by microwave rapid annealing
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- 作者：Shunsuke Kimura ; Kosuke Ota ; Masahiko Hasumi ; Ayuta Suzuki…
- 刊名：Applied Physics A: Materials Science & Processing
- 出版年：2016
- 出版时间：July 2016
- 年：2016
- 卷：122
- 期：7
- 全文大小：957 KB
- 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Condensed Matter
Optical and Electronic Materials
Nanotechnology
Characterization and Evaluation Materials
Surfaces and Interfaces and Thin Films
Operating Procedures and Materials Treatment - 出版者：Springer Berlin / Heidelberg
- ISSN：1432-0630
- 卷排序：122
文摘
A combination of the carbon-powder absorber with microwave irradiation is proposed as a rapid heat method. 2-μm-diameter carbon powders with a packing density of 0.08 effectively absorbed 2.45 GHz 1000-W-microwave and heated themselves to 1163 °C for 26 s. The present heat treatment recrystallized n-type crystalline silicon surfaces implanted with \(1.0 \times 10^{15}\hbox {-cm}^{-2}\)-boron and phosphorus atoms with crystalline volume ratios of 0.99 and 0.93, respectively, by microwave irradiation at 1000 W for 20 s. Activation and carrier generation were simultaneously achieved with a sheet resistivity of \(62\, \Omega / \hbox {sq}\). A high photo-induced-carrier effective lifetime of \(1.0 \times 10^{-4}\) s was also achieved. Typical electrical current-rectified characteristic and solar cell characteristic with an efficiency of 12.1 % under \(100\hbox{-mW/cm}^{2}\hbox{-air-mass-}1.5\) illumination were obtained. Moreover, heat treatment with microwave irradiation at 1000 W for 22 s successfully crystallized silicon thin films with thicknesses ranging from 2.4 to 50 nm formed on quartz substrates. Nano-crystalline cluster structure with a high volume ratio of 50 % was formed in the 1.8-nm (initial 2.4-nm)-thick silicon films. Photoluminescence around 1.77 eV was observed for the 1.8-nm-thick silicon films annealed at 260 °C in \(1.3 \times 10^{6}\)-Pa-H2O-vapor for 3 h after the microwave heating.