Spin Centres in SiC for Quantum Technologies

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• 作者：G. V. Astakhov ; D. Simin ; V. Dyakonov ; B. V. Yavkin…
• 刊名：Applied Magnetic Resonance
• 出版年：2016
• 出版时间：July 2016
• 年：2016
• 卷：47
• 期：7
• 页码：793-812
• 全文大小：4,020 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Analytical Chemistry
  
• 出版者：Springer Wien
• ISSN：1613-7507
• 卷排序：47

文摘

Atomic-scale colour centres in bulk and nanocrystalline SiC are promising for quantum information processing, photonics and sensing at ambient conditions. Their spin state can be initialized, manipulated and readout by means of optically detected magnetic resonance. It has been shown that there are at least two families of colour centres in SiC with S = 1 and S = 3/2, which have the property of optical alignment of the spin levels and allows a spin manipulation. The ground state and the excited state were demonstrated to have spin S = 3/2 and a population inversion in the ground state can be generated using optical pumping, leading to stimulated microwave emission even at room temperature. By controlling the neutron irradiation fluence, the colour centres concentration can be varied over several orders of magnitude down to a single defect level. Several, separately addressable spin centres have been identified in the same crystal for each polytype, which can be used either for magnetic field or temperature sensing. Some of these spin centres are characterised by nearly temperature independent zero-field splitting, making these centres very attractive for vector magnetometry. Contrarily, the zero-field splitting of the centres in the excited state exhibits a giant thermal shift, which can be used for thermometry applications. Finally coherent manipulation of spin states has been performed at room temperature and even at temperatures higher by hundreds of degrees. SiC is taking on a new role as a flexible and practical platform for harnessing the new quantum technologies.