Photovoltaic properties of ferroelectric solar cells based on polycrystalline BiFeO3 films sputtered on indium tin oxide substrates
详细信息 查看全文
- 作者：JianNing Ding (1) (2) (3)
MengJiao Chen (2) (3)
JianHua Qiu (2) (3)
NingYi Yuan (1) (2) (3)
1. Jiangsu Collaborative Innovation Center of Photovoltaic Science and Engineering ; Changzhou University ; Changzhou ; 213164 ; China
2. Center for Low-Dimensional Materials ; Micro-Nano Devices and Systems ; Changzhou University ; Changzhou ; 213164 ; China
3. Jiangsu Key Laboratory for Solar Cell Materials and Technology ; Changzhou University ; Changzhou ; 213164 ; China - 关键词：polycrystalline BiFeO3 ; photovoltaic effect ; ferroelectric solar cells ; Indium tin oxide substrate ; 澶氭櫠閾侀吀閾?/li> 鍏変紡鏁堝簲 ; 閾佺數澶槼鑳界數姹?/li> ITO鍩哄簳 ; 037701
- 刊名：SCIENCE CHINA Physics, Mechanics & Astronomy
- 出版年：2015
- 出版时间：March 2015
- 年：2015
- 卷：58
- 期：3
- 页码：1-6
- 全文大小：1,399 KB
- 参考文献：1. Wang J, Neaton J, Zheng H, et al. Epitaxial BiFeO3 multiferroic thin film heterostructures. Science, 2003, 299(5613): 1719鈥?722 CrossRef
2. Singh M K, Jang H M, Ryu S, et al. Polarized Raman scattering of multiferroic BiFeO3 epitaxial films with rhombohedral R3c symmetry. Appl Phys Lett, 2006, 88(4): 042907 CrossRef
3. Catalan G, Scott J F. Physics and applications of bismuth ferrite. Adv Mater, 2009, 21(24): 2463鈥?485 CrossRef
4. Eerenstein W, Mathur N, Scott J. Multiferroic and magnetoelectric materials. Nature, 2006, 442(7104): 759鈥?65 CrossRef
5. Yang S, Martin L, Byrnes S, et al. Photovoltaic effects in BiFeO3. Appl Phys Lett, 2009, 95(6): 062909 CrossRef
6. Dong W, Guo Y, Guo B, et al. Enhanced photovoltaic properties in polycrystalline BiFeO3 thin films with rhombohedral perovskite structure deposited on fluorine doped tin oxide substrates. Mater Lett, 2012, 88: 140鈥?42 CrossRef
7. Yang S, Seidel J, Byrnes S, et al. Above-bandgap voltages from ferroelectric photovoltaic devices. Nat Nanotechnol, 2010, 5(2): 143鈥?47 CrossRef
8. Lee D, Baek S, Kim T, et al. Polarity control of carrier injection at ferroelectric/metal interfaces for electrically switchable diode and photovoltaic effects. Phys Rev, 2011, 84(12): 125305 CrossRef
9. Chen B, Li M, Liu Y, et al. Effect of top electrodes on photovoltaic properties of polycrystalline BiFeO3 based thin film capacitors. Nanotechnology, 2011, 22(19): 195201 CrossRef
10. Liu H, Liu Z, Liu Q, et al. Ferroelectric properties of BiFeO3 films grown by sol-gel process. Thin Solid Films, 2006, 500(1): 105鈥?09 CrossRef
11. Chen B, Zuo Z, Liu Y, et al. Tunable photovoltaic effects in transparent Pb (Zr0.53, Ti0.47) O3 capacitors. Appl Phys Lett, 2012, 100(17): 173903 CrossRef
12. Zang Y, Xie D, Chen Y, et al. Investigation of the improved performance in a graphene/polycrystalline BiFeO3/Pt photovoltaic heterojunction: Experiment, modeling, and application. J Appl Phys, 2012, 112(5): 054103 CrossRef
13. Qi X, Tsai P C, Chen Y C, et al. Ferroelectric properties and dielectric responses of multiferroic BiFeO3 films grown by RF magnetron sputtering. J Phys D-Appl Phys, 2008, 41(23): 232001 CrossRef
14. Yun K Y, Noda M, Okuyama M. Prominent ferroelectricity of BiFeO3 thin films prepared by pulsed-laser deposition. Appl Phys Lett, 2003, 83(19): 3981鈥?983 CrossRef
15. Dong G, Tan G, Liu W, et al. Crystal structure and highly enhanced ferroelectric properties of (Tb, Cr) co-doped BiFeO3 thin films fabricated by a sol-gel method. Ceram Int, 2014, 40(1): 1919鈥?925 CrossRef
16. Basu S, Martin L, Chu Y, et al. Photoconductivity in BiFeO3 thin films. Appl Phys Lett, 2008, 92(9): 091905 CrossRef
17. Ukai Y, Yamazaki S, Kawae T, et al. Polarization-induced photovoltaic effects in Nd-doped BiFeO3 ferroelectric thin films. Jpn J Appl Phys, 2012, 51(9S1): 09LE10 CrossRef
18. Stolichnov I, Tagantsev A, Setter N, et al. Crossover between nucleation-controlled kinetics and domain wall motion kinetics of polarization reversal in ferroelectric films. Appl Phys Lett, 2003, 83(16): 3362鈥?364 CrossRef
19. Yang H, Luo H, Wang H, et al. Rectifying current-voltage characteristics of BiFeO3/Nb-doped SrTiO3 heterojunction. Appl Phys Lett, 2008, 92(10): 102113 CrossRef
20. Li H, Xia Y, Xu B, et al. Memristive behaviors of LiNbO3 ferroelectric diodes. Appl Phys Lett, 2010, 97(1): 012902 CrossRef
21. Borisevich A Y, Lupini A R, He J, et al. Interface dipole between two metallic oxides caused by localized oxygen vacancies. Phys Rev B, 2012, 86(14): 140102 CrossRef
22. Qin M, Yao K, Liang Y C. Photovoltaic mechanisms in ferroelectric thin films with the effects of the electrodes and interfaces. Appl Phys Lett, 2009, 95(2): 022912 CrossRef
23. Abe K, Yanase N, Yasumoto T, et al. Voltage shift phenomena in a heteroepitaxial BaTiO3 thin film capacitor. J Appl Phys, 2002, 91(1): 323鈥?30 CrossRef
24. Mehta R, Silverman B, Jacobs J. Depolarization fields in thin ferroelectric films. J Appl Phys, 2003, 44(8): 3379鈥?385 CrossRef - 刊物类别：Physics and Astronomy
- 刊物主题：Physics
Chinese Library of Science
Mechanics, Fluids and Thermodynamics
Physics - 出版者：Science China Press, co-published with Springer
- ISSN：1869-1927
文摘
To study the ferroelectric photovoltaic effect based on polycrystalline films, preparation of high-quality polycrystalline films with low leakage and high remnant polarization is essential. Polycrystalline BiFeO3 (BFO) thin films with extremely large remnant polarization (2P r = 180 C/cm2) were successfully deposited on glass substrates coated with indium tin oxide using a modified radio frequency magnetron sputtering method. Symmetric and asymmetric cells were constructed to investigate the ferroelectric photovoltaic effect in order to understand the relationship between polarization and photovoltaic response. All examined cells showed polarization-induced photovoltaic effect. Our findings also showed that the ferroelectric photovoltaic effect is highly dependent on the material used for the top electrode and the thickness of the polycrystalline film.