SiC formation for a solar cell passivation layer using an RF magnetron co-sputtering system

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• 作者：Yeun-Ho Joung (1)
  Hyun Il Kang (1)
  Jung Hyun Kim (2)
  Hae-Seok Lee (3)
  Jaehyung Lee (4)
  Won Seok Choi (1)
  
• 关键词：a ; Si1 ; xCx ; passivation layer ; RF magnetron co ; sputtering system ; carrier lifetime ; solar cell
• 刊名：Nanoscale Research Letters
• 出版年：2012
• 出版时间：December 2012
• 年：2012
• 卷：7
• 期：1
• 全文大小：303KB
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• 作者单位：Yeun-Ho Joung (1)
  Hyun Il Kang (1)
  Jung Hyun Kim (2)
  Hae-Seok Lee (3)
  Jaehyung Lee (4)
  Won Seok Choi (1)
  
  1. School of Electrical Engineering, Hanbat National University, Daejeon, 305-719, Republic of Korea
  2. Department of Applied Materials Engineering, Hanbat National University, Daejeon, 305-719, Republic of Korea
  3. Solar Cell R&D Center, Shinsung Solar Energy Co., Ltd., Seongnam, 463-420, Republic of Korea
  4. School of Information and Computer Engineering, Sungkyunkwan University, Suwon, 440-746, Republic of Korea
  
• ISSN：1556-276X

文摘

In this paper, we describe a method of amorphous silicon carbide film formation for a solar cell passivation layer. The film was deposited on p-type silicon (100) and glass substrates by an RF magnetron co-sputtering system using a Si target and a C target at a room-temperature condition. Several different SiC [Si1-xCx] film compositions were achieved by controlling the Si target power with a fixed C target power at 150 W. Then, structural, optical, and electrical properties of the Si1-xCx films were studied. The structural properties were investigated by transmission electron microscopy and secondary ion mass spectrometry. The optical properties were achieved by UV-visible spectroscopy and ellipsometry. The performance of Si1-xCx passivation was explored by carrier lifetime measurement.