Photoluminescence studies of ZnO thin films prepared using a laser-assisted sol-gel method

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• 作者：Min Su Kim (1)
  Jewon Lee (1)
  Yangsoo Kim (1)
  Jae-Young Leem (1)
  Sang-heon Lee (2)
  Wonshoup So (2)
  Jae Hak Jung (2)
  Jong Su Kim (3)
  
• 关键词：Zinc oxide ; Sol ; gel method ; He ; Cd laser ; Photoluminescence
• 刊名：Journal of the Korean Physical Society
• 出版年：2012
• 出版时间：December 2012
• 年：2012
• 卷：61
• 期：11
• 页码：1826-1830
• 全文大小：233KB
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• 作者单位：Min Su Kim (1)
  Jewon Lee (1)
  Yangsoo Kim (1)
  Jae-Young Leem (1)
  Sang-heon Lee (2)
  Wonshoup So (2)
  Jae Hak Jung (2)
  Jong Su Kim (3)
  
  1. Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, 621-749, Korea
  2. School of Chemical Engineering, Yeungnam University, Gyeongsan, 712-749, Korea
  3. Department of Physics, Yeungnam University, Gyeongsan, 712-749, Korea
  
• ISSN：1976-8524

文摘

ZnO thin films were grown on Si(100) substrates by using a laser-assisted sol-gel method involving irradiation from a 325-nm He-Cd laser. In contrast to conventionally-synthesized sol-gel ZnO thin films, the surfaces of those grown using the laser-assisted sol-gel method were much smoother. The optical properties of the ZnO thin films were investigated using temperature-dependent photoluminescence (PL). In the room-temperature PL spectra, the intensity of the blue-green emission was dramatically decreased by laser irradiation during the stages of deposition and post-heat treatment. Moreover, the full width at half maximum of the near-band-edge emission peaks was decreased by the laser irradiation. The activation energy of the laser-assisted sol-gel ZnO thin films was determined to be ?9 meV, and the values of the fitting parameters α and β for Varshni’s empirical equation were 4 × 10? eV/K and 4.9 × 103 K, respectively. Another fitting based on the thermal broadening effect of the excitonic emission peak revealed a decreased exciton-phonon interaction in the laser-assisted ZnO thin films.