Temperature-dependent photoluminescence of ZnO thin films deposited by using the sol-gel dip-coating method

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• 作者：Sang-heon Lee (1)
  Wonshoup So (1)
  Jae Hak Jung (1)
  Giwoong Nam (2)
  Hyunsik Yoon (2)
  Hyunggil Park (2)
  Kyeong Min Kim (2)
  Soaram Kim (3)
  Min Su Kim (3)
  Jewon Lee (3)
  Jae-Young Leem (3)
  
• 关键词：II–VI ; Luminescence ; Scanning electron microscopy
• 刊名：Journal of the Korean Physical Society
• 出版年：2012
• 出版时间：October 2012
• 年：2012
• 卷：61
• 期：8
• 页码：1171-1176
• 全文大小：307KB
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• 作者单位：Sang-heon Lee (1)
  Wonshoup So (1)
  Jae Hak Jung (1)
  Giwoong Nam (2)
  Hyunsik Yoon (2)
  Hyunggil Park (2)
  Kyeong Min Kim (2)
  Soaram Kim (3)
  Min Su Kim (3)
  Jewon Lee (3)
  Jae-Young Leem (3)
  
  1. School of Chemical Engineering, Yeungnam University, Gyeongsan, 712-749, Korea
  2. Department of Nano Engineering, Inje University, Gimhae, 621-749, Korea
  3. Department of Nano Systems Engineering, Center for Nano Manufacturing, Inje University, Gimhae, 621-749, Korea
  
• ISSN：1976-8524

文摘

The sol-gel dip-coating method is a simple and inexpensive technique compared to molecular beam epitaxy and chemical vapor deposition. In spite of extensive research over the past several years, the temperature-dependent photoluminescence in ZnO is still not fully understood. The temperaturedependent PL of ZnO thin films grown on quartz substrate by using the dip-coating method are investigated. According to Haynes-empirical rule, the peak at 3.320 eV could be attributed to two electron satellites (TES). Theoretically, the radiative lifetime of the free excitons increases with temperature. The full width at half maximum (FWHM) is theoretically fitted by the experimental data. In the case of exciton-LO phonon coupling, the FWHM value of the donor-acceptor pair (DAP) is larger than that of the free-to-neutral-acceptor (e,A0). In the case of the exciton-acoustic-phonon coupling strength, however, the value of the DAP is smaller than that of the (e,A0).