Direct Determination of Burgers Vectors of Threading Mixed Dislocations in 4H-SiC Grown by PVT Method

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• 作者：Jianqiu Guo ; Yu Yang ; Fangzhen Wu ; Joe Sumakeris…
• 关键词：Silicon carbide ; physical vapor transport ; bulk growth ; x ; ray topography ; threading dislocations ; ray ; tracing simulation
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：45
• 期：4
• 页码：2045-2050
• 全文大小：1,194 KB
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• 作者单位：Jianqiu Guo (1)
  Yu Yang (1)
  Fangzhen Wu (1)
  Joe Sumakeris (2)
  Robert Leonard (2)
  Ouloide Goue (1)
  Balaji Raghothamachar (1)
  Michael Dudley (1)
  
  1. Department of Materials Science & Engineering, Stony Brook University, Stony Brook, NY, 11794, USA
  2. Cree Inc., 4600 Silicon Drive, Durham, NC, 27703, USA
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

In addition to pure threading screw dislocations (TSDs), the presence of threading mixed dislocations (TMDs) (with a component) has been reported both in 4H-SiC axial slices (wafers cut parallel to the growth axis) and in commercial offcut wafers (cut almost perpendicular to the growth axis). In this paper, we first demonstrate a method to quickly distinguish TMDs from TSDs in axial slices via synchrotron white-beam x-ray topography. Since such axial slices are usually not available for commercial purposes, a systematic method is then developed and demonstrated here to unambiguously determine the Burgers vectors of TMDs in 4H-SiC commercial offcut wafers. In this second study, both synchrotron monochromatic-beam x-ray topography and ray-tracing simulation are used. The x-ray topographs were recorded using grazing-incidence geometry. The principle of this method is that the contrast of dislocations on different reflections varies with the relative orientation of Burgers vectors with respect to the diffraction vectors. Measurements confirm that, in a commercial offcut wafer, the majority of the threading dislocations with screw component are mixed-type dislocations.