InGaN metal-insulator-semiconductor photodetector using Al2O3 as the insulator
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- 作者：KaiXiao Zhang (1) (2)
AiBin Ma (2)
JingHua Jiang (2)
Yan Xu (1)
Fei Tai (1)
JiangFeng Gong (1)
Hua Zou (1)
WeiHua Zhu (1) - 关键词：InGaN ; photodetector ; metal ; insulator ; semiconductor ; current transport
- 刊名：SCIENCE CHINA Technological Sciences
- 出版年：2013
- 出版时间：March 2013
- 年：2013
- 卷：56
- 期：3
- 页码：633-636
- 全文大小：474KB
- 参考文献：1. Wu J, Walukiewicz W, Yu K M, et al. Unusual properties of the fundamental band gap of InN. Appl Phys Lett, 2002, 80: 3967鈥?969 CrossRef
2. Chen J, Fan G H, Zhang Y Y, et al. Performance improvement of InGaN blue light-emitting diodes with several kinds of electron-blocking layers. Chin Phys B, 2012, 21(5): 58504-1鈥?8504-6
3. Chen D J, Liu B, Lu H, et al. Improved performances of InGaN Schottky photodetectors by inducing a thin insulator layer and mesa process. IEEE Electron Device Lett, 2009, 30: 605鈥?07 CrossRef
4. Zhou J J, Wen B, Jiang R L, et al. Photoresponse of the In0.3Ga0.7N metal-insulator-semiconductor photodetectors. Chin Phys, 2007, 16: 2120鈥?122 CrossRef
5. Veal T D, Jefferson P H, Piper L F J, et al. Transition from electron accumulation to depletion at InGaN surfaces. Appl Phys Lett, 2006, 89: 202110-1鈥?02110-3
6. Li S X, Yu K M, Wu J, et al. Fermi-level stabalization energy in group III nitrides. Phys Rev B, 2005, 71: 161201-1鈥?61201-4
7. Chen D J, Huang Y, Liu B, et al. High-quality Schottky contacts to n-InGaN alloys prepared for photovoltaic devices. J Appl Phys, 2009, 105: 063714-1鈥?63714-4
8. Adivarahan V, Simin G, Yang J W, et al. SiO2-passivated lateral-geometry GaN transparent Schottky-barrier detectors. Appl Phys Lett, 2000, 77: 863鈥?65 CrossRef
9. Sahoo S K, Misra D, Agrawal D C, et al. Leakage mechanism of Ba0.8Sr0.2TiO3/ZrO2 multilayer thin films. J Appl Phys, 2010, 108: 074112-1鈥?74112-5 CrossRef - 作者单位：KaiXiao Zhang (1) (2)
AiBin Ma (2)
JingHua Jiang (2)
Yan Xu (1)
Fei Tai (1)
JiangFeng Gong (1)
Hua Zou (1)
WeiHua Zhu (1)
1. College of Science, Hohai University, Nanjing, 210098, China
2. College of Mechanics & Materials, Hohai University, Nanjing, 210098, China - ISSN：1869-1900
文摘
In this paper, an InGaN metal-insulator-semiconductor (MIS) photodetector with an ultra-thin Al2O3 insulation layer deposited by atomic layer deposition (ALD) was studied. A high photoelectric responsivity of 0.25 A/W and a spectral responsivity rejection ratio of about three orders of magnitude at 1 V reverse bias were achieved for this MIS photodetector. The dominant carrier transport mechanism in the InGaN MIS photodetectors is submitted to the space charge limited current (SCLC) mechanism at high field and exhibits an Ohmic-like conduction at low electric field. The results indicate that the ultra-thin Al2O3 film deposited by the ALD technique can act as an excellent insulation dielectric for the InGaN photodetectors.