The effect of infrared plasmon on the performance of Si-based THz detectors

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• 作者：He Zhu ; Jintao Xu ; Jiaqi Zhu ; Miao Wang…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：28
• 期：1
• 页码：839-844
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

Plasmons in metals have great impact on light emission, propagation, and detection in visible and infrared light wave frequencies. To explore plasmonic effect on the THz detection, both a backside-illuminated and a topside-illuminated blocking impurity band (BIB) THz detectors are developed and significant influence of plasmonic effect on the performance of BIB THz detectors is observed. The plasmonic effect in the heavily doped semiconductor layer of BIB THz detectors causes high reflectance of THz radiation which curtails the detection frequencies of the backside-illuminated BIB detectors. However, due to the advantages of flip-chip package and high quantum efficiency, the dark current, the responsivity, and the detectivity of the backside-illuminated detector shows superior characteristics to the topside-illuminated detector. The performance of the THz detector could be further improved with the suppression of the plasmonic effect.