Ultra-low-κ HFPDB-based periodic mesoporous organosilica film with high mechanical strength for interlayer dielectric

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• 作者：Jiawei Zhang ; Guoping Zhang ; Yongju Gao ; Rong Sun…
• 刊名：Journal of Materials Science
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：51
• 期：17
• 页码：7966-7976
• 全文大小：2,354 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Materials Science
  Characterization and Evaluation Materials
  Polymer Sciences
  Continuum Mechanics and Mechanics of Materials
  Crystallography
  Mechanics
  
• 出版者：Springer Netherlands
• ISSN：1573-4803
• 卷排序：51

文摘

A novel bridged organosilane precursor with star-shaped construction, [hexfluoropropane-2,2-diyl)dibenzyl-bridged organosilane (HFPDBO)], is prepared by facile organic synthesis method. The resultant HFPDBO precursor is mixed with porogen and acid catalyst to prepare periodic mesoporous organosilica (PMO) thin film via evaporation-induced self-assembly after spin-coating procedure. All the as-prepared HFPDB-based PMO thin film has been characterized by Fourier transform infrared spectroscopy, nuclear magnetic resonance spectrum, scanning electron microscopy, transmission electron microscope, and small-angle X-ray diffraction, respectively. Thereinto, the HFPDB-based PMO thin film with weight ratio of porogen to precursor (0.75:1) possesses excellent dielectric property (1.58@1 MHz of dielectric constants), high mechanical property (5.54 ± 0.11 GPa of Young’s modulus) and hydrophobic property (90.1° of water contact angle) simultaneously. These low dielectric constant, high mechanical strength, and the hydrophobicity suggest potential application of the HFPDB-based PMO thin films as low-k materials in microelectronics.Electronic supplementary materialThe online version of this article (doi:10.1007/s10853-016-0066-6) contains supplementary material, which is available to authorized users.