Resistive switching of in situ and ex situ oxygen plasma treated ZnO thin film deposited by atomic layer deposition

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• 作者：Jian Zhang (1)
  Hui Yang (1)
  Qilong Zhang (1)
  Hao Jiang (1)
  Jikui Luo (2)
  Juehui Zhou (1)
  Shurong Dong (2)
  
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2014
• 出版时间：August 2014
• 年：2014
• 卷：116
• 期：2
• 页码：663-669
• 全文大小：1,350 KB
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• 作者单位：Jian Zhang (1)
  Hui Yang (1)
  Qilong Zhang (1)
  Hao Jiang (1)
  Jikui Luo (2)
  Juehui Zhou (1)
  Shurong Dong (2)
  
  1. Department of Materials Science and Engineering, Zhejiang University, Hangzhou, 310027, China
  2. Department of Information Science and Electronic Engineering, Zhejiang University, Hangzhou, 310027, China
  
• ISSN：1432-0630

文摘

In situ and ex situ oxygen plasma treatment (OPT) were applied to treat ZnO thin films deposited by thermal atomic layer deposition (T-ALD), and the resistive switching (RS) behaviors of the films were investigated. For the in situ OPT, the treatment was applied after each T-ALD cycle. For the ex situ OPT, the treatment was applied on the as-grown film. The T-ALD-grown ZnO films were defect-rich and conductive with no RS behavior. After the OPT process, the resistivity of the films increased drastically, which is believed to be mainly due to the removal of hydrogen impurities, and the films showed bipolar RS characteristics. The dominant conduction mechanisms are the trap-controlled space charge limited current and ohmic behavior at different field regions. The RS behavior was induced upon the formation/disruption of the conducting filaments. Owing to the homogeneous chemical composition and fewer defects, the resistance ratio of the in situ OPT ZnO film is higher than that of the ex situ OPT film, implying that the in situ OPT method is an efficient way to fabricate resistive random access memory devices using the ALD-grown ZnO films.