High Seebeck Coefficient in Solution-Grown PbS Films
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- 作者：Fazal Wahab (1) (2)
Gustavo E. Fernandes (1)
Jin Ho Kim (1)
Seungwoo Jung (3)
Ki-Bum Kim (3)
M. Hassan Sayyad (2)
Jimmy Xu (1) (3) - 关键词：Lead sulfide (PbS) ; Seebeck coefficient ; bandgap ; scattering
- 刊名：Journal of Electronic Materials
- 出版年：2014
- 出版时间：February 2014
- 年：2014
- 卷：43
- 期：2
- 页码：348-352
- 全文大小：422 KB
- 作者单位：Fazal Wahab (1) (2)
Gustavo E. Fernandes (1)
Jin Ho Kim (1)
Seungwoo Jung (3)
Ki-Bum Kim (3)
M. Hassan Sayyad (2)
Jimmy Xu (1) (3)
1. School of Engineering, Brown University, 182 Hope Street, Providence, RI, 02912, USA
2. Faculty of Engineering Sciences, Ghulam Ishaq Khan Institute of Engineering Sciences and Technology, Topi, 23640, Pakistan
3. WCU Hybrid Materials Program, Department of Materials Science and Engineering, Seoul National University, Seoul, Korea - ISSN：1543-186X
文摘
We have investigated the Seebeck coefficient of solution-grown lead sulfide (PbS) films at room temperature. A high Seebeck coefficient of 450?μV/K was observed, which is over three times the value commonly measured for PbS films. The positive sign of the Seebeck coefficient indicates that the measured film was characteristically p-type. The high sheet resistance of the films, ?86?kΩ/sq., suggests that the high Seebeck coefficient may be the result of increased contributions from junctions and boundary scattering of carriers occurring at interfaces between nanocrystallites, consistent with the scanning electron microscopy study of the film morphology. The solution-grown PbS technology employed here is inherently scalable and, with the larger Seebeck coefficient, may be well suited for energy-harvesting applications.