High-performance HfO x /AlO y -based resistive switching memory cross-point array fabricated by atomic layer deposition
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- 作者：Zhe Chen (1)
Feifei Zhang (1)
Bing Chen (1)
Yang Zheng (1)
Bin Gao (1)
Lifeng Liu (1)
Xiaoyan Liu (1)
Jinfeng Kang (1)
1. Institute of Microelectronics ; Peking University ; #5 Yiheyuan Road ; Beijing ; 100871 ; China - 关键词：RRAM ; Cross ; point array ; Atomic layer deposition (ALD)
- 刊名：Nanoscale Research Letters
- 出版年：2015
- 出版时间：December 2015
- 年：2015
- 卷：10
- 期：1
- 全文大小：1,928 KB
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- 出版者：Springer US
- ISSN：1556-276X
文摘
Resistive switching memory cross-point arrays with TiN/HfO x /AlO y /Pt structure were fabricated. The bi-layered resistive switching films of 5-nm HfO x and 3-nm AlO y were deposited by atomic layer deposition (ALD). Excellent device performances such as low switching voltage, large resistance ratio, good cycle-to-cycle and device-to-device uniformity, and high yield were demonstrated in the fabricated 24 by 24 arrays. In addition, multi-level data storage capability and robust reliability characteristics were also presented. The achievements demonstrated the great potential of ALD-fabricated HfO x /AlO y bi-layers for the application of next-generation nonvolatile memory.