Effect of post-annealing temperature on the dielectric function of solution-processed LaAlO x /Si Films
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- 作者：Tae Jung Kim (1)
Jae Chan Park (1)
Soon Yong Hwang (1)
Jun Seok Byun (1)
Han Gyeol Park (1)
Yu Ri Kang (1)
Young Dong Kim (1)
Soo Min Hwang (2)
Seung Muk Lee (2)
Jinho Joo (2) - 关键词：78.20.Ci ; 78.66.Jg ; LaAlOx ; Ellipsometry ; Dielectric function ; Sol ; gel process
- 刊名：Journal of the Korean Physical Society
- 出版年：2014
- 出版时间：May 2014
- 年：2014
- 卷：64
- 期：10
- 页码：1509-1513
- 全文大小：
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21. S. M. Hwang, S. M. Lee and J. Joo (unpublished). - 作者单位：Tae Jung Kim (1)
Jae Chan Park (1)
Soon Yong Hwang (1)
Jun Seok Byun (1)
Han Gyeol Park (1)
Yu Ri Kang (1)
Young Dong Kim (1)
Soo Min Hwang (2)
Seung Muk Lee (2)
Jinho Joo (2)
1. Nano-optical Property Laboratory and Department of Physics, Kyung Hee University, Seoul, 130-701, Korea
2. School of Advanced Materials Science and Engineering, Sungkyunkwan University, Suwon, 440-746, Korea - ISSN：1976-8524
文摘
We report the optical properties of amorphous LaAlOx (LAO) films grown by using the sol-gel process. The dielectric functions ε of the LAO films are obtained from 0.7 to 8.6 eV as a function of post-annealing temperature using spectroscopic ellipsometry. The LAO precursor sols were prepared at a molar ratio of La:Al = 1:1, were deposited on p-type Si substrates, and were sintered at 400 °C. Post-annealing was performed for 1 min in N2 by rapid thermal annealing (RTA) at 700, 850, and 1000 °C. The e spectra of the resulting LAO films were obtained from the measured pseudodielectric functions by using multilayer calculations with the Tauc-Lorentz dispersion relation. We found that the values of ε for the sol-gel-deposited LAO films depended on the RTA temperature. This dependence provides a fundamental tuning basis for the solution-processed manufacture of LAO devices.