Sintering behavior and refining grains of high density tin doped indium oxide targets with low tin oxide content
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- 作者：Jiwen Xu ; Ling Yang ; Hua Wang ; Guisheng Zhu…
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2016
- 出版时间：April 2016
- 年：2016
- 卷：27
- 期：4
- 页码：3298-3304
- 全文大小：1,594 KB
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Ling Yang (1) (2)
Hua Wang (1)
Guisheng Zhu (1) (2)
Huarui Xu (1)
Changrong Zhou (1)
Changlai Yuan (1)
Zupei Yang (3)
1. Guangxi Key Laboratory of Information Materials, Guilin University of Electronic Technology, Guilin, 541004, People’s Republic of China
2. Guangxi Experiment Center of Information Science, Guilin, 541004, People’s Republic of China
3. School of Material Science and Engineering, Shaanxi Normal University, Xi’an, 710062, People’s Republic of China - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials - 出版者：Springer New York
- ISSN：1573-482X
文摘
High density indium tin oxide (ITO) ceramic targets with low SnO2 content were prepared successfully by sintering co-precipitationally synthesized powders. The sintering behavior, properties and refining grains of the ITO targets were studied in normal pressure oxygen ambience. Higher sintering temperature promoted sintering densification, resulted in abnormal grain growth and decreased bending strength. By a two-step sintering method, the uniform and fine-grained microstructures were obtained. The sintered density of the ITO targets was further improved. Furthermore, the grain size was reduced, and the bending strength was also enhanced.