Impact of Tellurium Precipitates in CdZnTe Substrates on MBE HgCdTe Deposition

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• 作者：J. D. Benson (1)
  L. O. Bubulac (1)
  P. J. Smith (1)
  R. N. Jacobs (1)
  J. K. Markunas (1)
  M. Jaime-Vasquez (1)
  L. A. Almeida (1)
  A. Stoltz (1)
  P. S. Wijewarnasuriya (2)
  G. Brill (2)
  Y. Chen (2)
  J. Peterson (3)
  M. Reddy (3)
  M. F. Vilela (3)
  S. M. Johnson (3)
  D. D. Lofgreen (3)
  A. Yulius (4)
  G. Bostrup (4)
  M. Carmody (4)
  D. Lee (4)
  S. Couture (4)
  
• 关键词：HgCdTe/CdZnTe ; molecular beam epitaxy ; Te precipitate ; macro ; and micro ; defects
• 刊名：Journal of Electronic Materials
• 出版年：2014
• 出版时间：November 2014
• 年：2014
• 卷：43
• 期：11
• 页码：3993-3998
• 全文大小：1,156 KB
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• 作者单位：J. D. Benson (1)
  L. O. Bubulac (1)
  P. J. Smith (1)
  R. N. Jacobs (1)
  J. K. Markunas (1)
  M. Jaime-Vasquez (1)
  L. A. Almeida (1)
  A. Stoltz (1)
  P. S. Wijewarnasuriya (2)
  G. Brill (2)
  Y. Chen (2)
  J. Peterson (3)
  M. Reddy (3)
  M. F. Vilela (3)
  S. M. Johnson (3)
  D. D. Lofgreen (3)
  A. Yulius (4)
  G. Bostrup (4)
  M. Carmody (4)
  D. Lee (4)
  S. Couture (4)
  
  1. U. S. Army RDECOM, CERDEC Night Vision and Electronic Sensors Directorate, Ft. Belvoir, VA, USA
  2. U. S. Army Research Laboratory, Adelphi, MD, USA
  3. Raytheon Vision Systems, Goleta, CA, USA
  4. Teledyne Imaging Sensors, Camarillo, CA, USA
  
• ISSN：1543-186X

文摘

State-of-the-art (112)B CdZnTe substrates were examined for near-surface tellurium precipitate-related defects. The Te precipitate density was observed to be fairly uniform throughout the bulk of the wafer, including the near-surface region. After a molecular beam epitaxy (MBE) preparation etch, exposed Te precipitates, small pits, and bumps on the (112)B surface of the CdZnTe wafer were observed. From near-infrared and dark field microscopy, the bumps and small pits on the CdZnTe surface are associated with strings of Te precipitates. Raised bumps are Te precipitates near the surface of the (112)B CdZnTe where the MBE preparation etch has not yet exposed the Te precipitate(s). An exposed Te precipitate sticking above the etched CdZnTe surface plane occurs when the MBE preparation etch rapidly undercuts a Te precipitate. Shallow surface pits are formed when the Te precipitate is completely undercut from the surrounding (112)B surface plane. The Te precipitate that was previously located at the center of the pit is liberated by the MBE preparation etch process.