Temperature-dependent hall measurement of AlGaN/GaN heterostructures on Si substrates

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• 作者：In Hak Lee (1)
  Yong Hyun Kim (1)
  Young Jun Chang (1)
  Jong Hoon Shin (2)
  T. Jang (2)
  Seung Yup Jang (2)
  
  1. Department of Physics ; University of Seoul ; Seoul ; 135-743 ; Korea
  2. IGBT Part ; System IC R&D Laboratory ; LG Electronics ; Seoul ; 137-724 ; Korea
  
• 关键词：GaN ; Hall measurement ; High electron mobility transistor ; Impurity scattering
• 刊名：Journal of the Korean Physical Society
• 出版年：2015
• 出版时间：January 2015
• 年：2015
• 卷：66
• 期：1
• 页码：61-64
• 全文大小：469 KB
• 参考文献：1. W. Saito, Y. Takada, M. Kuraguchi, K. Tsuda and I. Omura, IEEE Trans. Electron Devices 53, 356 (2006). CrossRef
  2. S. J. Pearton, J. C. Zolper, R. J. Shul and F. Ren, J. Appl. Phys. 86, 1 (1999). CrossRef
  3. H. Shin, K. Jeon, Y. Jang, M. Gang, M. Choi, W. Park and K. Park, J. Korean Phys. Soc. 63, 1621 (2013). CrossRef
  4. M. Tapajna, S. W. Kaun, M. H. Wong, F. Gao, T. Palacios, U. K. Mishra, J. S. Speck and M. Kuball, Appl. Phys. Lett. 99, 223501 (2011).
  5. S. W. Kaun, P. G. Burke, M. H. Wong, E. C. H. Kyle, U. K. Mishra and J. S. Speck, Appl. Phys. Lett. 101, 262102 (2012).
  6. H. F. Liu, S. B. Dolmanan, L. Zhang, S. J. Chua, D. Z. Chi, M. Heuken and S. Tripathy, J. Appl. Phys. 113, 023510 (2013).
  7. O. Ambacher / et al., J. Appl. Phys. 85, 3222 (1999). CrossRef
  8. M. Aziz and T. Palacios, J. Appl. Phys. 108, 023707 (2010).
  9. H. Tokuda, J. Ymazaki and M. Kuzuhara, J. Appl. Phys. 108, 104509 (2010).
  10. A. Asgari, S. Babanejad and L. Faraone, J. Appl. Phys. 110, 113713 (2011).
  11. L. Pfeiffer, K. W. West, H. L. Stormer and K. W. Baldwin, Appl. Phys. Lett. 55, 1888 (1989). CrossRef
  12. R. Fivaz and E. Mooser, Phys. Rev. 163, 743 (1967). CrossRef
  13. J. H. Shin, Y. J. Jo, K.-C. Kim, T. Jang and K. S. Kim, Appl. Phys. Lett. 100, 111908 (2012).
  14. O. Celik, E. Tiras, S. Ardali, S. B. Lisesivdin and E. Ozbay Cent. Eur, J. Phys. 10, 485 (2012). CrossRef
  15. B. S. Joo, M. Han, Y. J. Chang, J. H. Shin, S. Y. Jang and T. Jang, J. Korean Phys. Soc. 63, 2314 (2013). CrossRef
  
• 刊物主题：Physics, general; Theoretical, Mathematical and Computational Physics; Particle and Nuclear Physics;
• 出版者：Springer Netherlands
• ISSN：1976-8524

文摘

For AlGaN/GaN high electron mobility transistor (HEMT) devices grown on Si substrates, we studied the influence of the surface defect density on the Hall mobility and the carrier concentration. We established a Hall measurement system over wide temperature range (8 ~ 800 K) by combining a closed-cycle refrigerator and a heating chamber. The two-dimensional electron gas (2DEG) in the epitaxially-grown AlGaN/GaN HEMT structures showed high mobilities, i.e., > 1500 cm2/Vs at 300 K and > 7000 cm2/Vs at 8 K. As the surface defect density increased, the mobility values at 8 K decreased due to scattering from charged impurities at low temperatures. However, at high temperatures where optical phonons are a major source of scattering, the mobilities do not show a significant dependence on the surface defect density. In addition, the carrier density showed an unexpected decrease at temperatures above 300 K, which is ascribed to a change in the misfit strain upon heating.