Memristive properties of In2O3/LaNiO3 heterostructures grown by pulsed laser deposition

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• 作者：B. V. Mistry ; R. Pinto ; U. S. Joshi
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：27
• 期：2
• 页码：1812-1816
• 全文大小：1,830 KB
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• 作者单位：B. V. Mistry (1) <br> R. Pinto (2) <br> U. S. Joshi (1) <br><br>1. Department of Physics, School of Sciences, Gujarat University, Ahmedabad, 380 009, India <br> 2. Department of Electrical Engineering, Centre of Excellence in Nanoelectronics, Indian Institute of Technology-Bombay, Powai, Mumbai, 400 076, India <br>
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry<br>Optical and Electronic Materials<br>Characterization and Evaluation Materials<br>
• 出版者：Springer New York
• ISSN：1573-482X

文摘

Resistance switching properties of nanostructured Inb>2b>Ob>3b> films grown on LaNiOb>3b> (LNO) bottom electrode (BE) have been investigated for non volatile memory applications. Ag/Inb>2b>Ob>3b>/LNO/SiOb>2b> heterostructures were fabricated by pulsed laser deposition. Polycrystalline growth of oxides LNO and Inb>2b>Ob>3b> was confirmed by GIXRD, while AFM show nanostructured growth with smooth surface morphology. Two terminal I–V characteristics showed reproducible two distinct resistance states in the film and unipolar type switching. Typical resistance switching ratio (R b> on b>/R b> off b>) of the order of 112 % has been estimated at room temperature. A possible mechanism of the formation and rupture of conducting filament is proposed based on the Joule heating effect with external electron injection at the Ag/Inb>2b>Ob>3b> top interface, whereas the LNO BE acts as oxygen reservoir at the Inb>2b>Ob>3b>/LNO interface.