文摘
The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193?nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of \(1 \times 10^{15}\,\mathrm{cm}^{-2}\) and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated.