Photocarrier Radiometry Characterization of Ultra-shallow Junctions (USJ) in Silicon with Excimer Laser Irradiation

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• 作者：Qian Wang ; Bincheng Li ; Shengdong Ren ; Qiang Wang
• 关键词：Ion implantation ; Laser irradiation ; Photocarrier radiometry ; Silicon ; Ultra ; shallow junction
• 刊名：International Journal of Thermophysics
• 出版年：2015
• 出版时间：June 2015
• 年：2015
• 卷：36
• 期：5-6
• 页码：1173-1180
• 全文大小：665 KB
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• 作者单位：Qian Wang (1) (2)
  Bincheng Li (1)
  Shengdong Ren (1) (2)
  Qiang Wang (1)
  
  1. Institute of Optics and Electronics, Chinese Academy of Sciences, P.O. Box 350, Shuangliu, Chengdu, 610209, Sichuan, China
  2. University of the Chinese Academy of Sciences, Beijing, 100039, China
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Mechanics
  Industrial Chemistry and Chemical Engineering
  Physical Chemistry
  
• 出版者：Springer Netherlands
• ISSN：1572-9567

文摘

The activation and recrystallization in arsenic ion-implanted silicon under excimer laser (193?nm) irradiation is investigated using photocarrier radiometry (PCR). Arsenic ion-implanted silicon wafers with a dose of \(1 \times 10^{15}\,\mathrm{cm}^{-2}\) and an energy of 1 keV were irradiated at different laser parameters, such as the laser fluence, shot number, and repetition rate. The excimer laser irradiation-induced enhancement of PCR signals of implanted silicon samples showed that the implantation-induced crystalline structural damage was reduced and the implanted ions were effectively activated.