Analytical Modeling of Potential Distribution and Threshold Voltage of Gate Underlap DG MOSFETs with a Source/Drain Lateral Gaussian Doping Profile

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• 作者：Kunal Singh ; Mirgender Kumar ; Ekta Goel ; Balraj Singh…
• 关键词：DG MOSFETs ; ultra ; shallow junction (USJ) ; straggle parameter ; drain ; induced barrier lowering (DIBL) ; short ; channel effects (SCEs) ; gate underlap ; loss of switching speed
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：45
• 期：4
• 页码：2184-2192
• 全文大小：1,516 KB
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• 作者单位：Kunal Singh (1)
  Mirgender Kumar (1)
  Ekta Goel (1)
  Balraj Singh (1)
  Sarvesh Dubey (2)
  Sanjay Kumar (1)
  Satyabrata Jit (1)
  
  1. Department of Electronics Engineering, Indian Institute of Technology (BHU), Varanasi, 221005, India
  2. Faculty of Electronics and Communication Engineering, Shri Ramswaroop Memorial University, Lucknow-Deva Road, Barabanki, 225003, India
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  Electronics, Microelectronics and Instrumentation
  Solid State Physics and Spectroscopy
  
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

This paper reports a new two-dimensional (2D) analytical model for the potential distribution and threshold voltage of the short-channel symmetric gate underlap ultrathin DG MOSFETs with a lateral Gaussian doping profile in the source (S)/drain (D) region. The parabolic approximation and conformal mapping techniques have been explored for solving the 2D Poisson’s equation to obtain the channel potential function of the device. The effects of straggle parameter (of the lateral Gaussian doping profile in the S/D region), underlap length, gate length, channel thickness and oxide thickness on the surface potential and threshold voltage have been investigated. The loss of switching speed due to the drain-induced barrier lowering (DIBL) has also been reported. The proposed model results have been validated by comparing them with their corresponding TCAD simulation data obtained by using the commercially available 2D ATLAS™ simulation software.