Temperature switching of cavity modes in InN microcrystals

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• 作者：D. R. Kazanov ; V. H. Kaibyshev ; V. Yu. Davydov ; A. N. Smirnov…
• 刊名：Semiconductors
• 出版年：2015
• 出版时间：November 2015
• 年：2015
• 卷：49
• 期：11
• 页码：1435-1439
• 全文大小：563 KB
• 参考文献：1.K. J. Vahala, Nature 424, 839 (2003).CrossRef ADS r>2.M. Bürger, G. Gallsen, T. Kure, A. Hoffmann, A. Pawlis, D. Reuter, and D. J. As, Appl. Phys. Lett. 103, 021107 (2013).CrossRef ADS r>3.Y. Zhang, Z. Ma, Z. Zhang, T. Wang, and H. W. Choi, Appl. Phys. Lett. 104, 221106 (2014).CrossRef ADS r>4.T. Nobis, R. M. Kaidashev, A. Rahm, M. Lorenz, and M. Grundmann, Phys. Rev. Lett. 93, 103903 (2004).CrossRef ADS r>5.T. Nobis and M. Grundmann, Phys. Rev. A 72, 063806 (2005).CrossRef ADS r>6.M. A. Kaliteevski, S. Brand, R. A. Abram, A. Kavokin, and L. S. Dang, Phys. Rev. B 75, 233309 (2007).CrossRef ADS r>7.Ya. V. Alekseenko, A. M. Monakhov, and I. V. Rozhanskii, Tech. Phys. 54, 1633 (2009).CrossRef r>8.T. V. Shubina, V. N. Zhmerik, V. Yu. Davydov, A. N. Smirnov, V. Kh. Kaibyshev, G. Pozina, B.Monemar, A. V. Andrianov, D. I. Kunitsyn, S. V. Ivanov, and P. S. Kop’ev, in Proceedings of the 18th International Symposium on Nanophysics and Nanoelectronics (Nizh. Novgorod, 2014), vol. 2, p. 616.r>9.A. L. Efros and B. L. Shklovskii, Electronic of Doped Semiconductors (Springer, Heidelberg, 1989).r>10.T. V. Shubina, M. M. Glazov, S. V. Ivanov, A. Vasson, J. Leymarie, B. Monemar, T. Araki, H. Naoi, and Y. Nanishi, Phys. Status Solidi C 4, 2474 (2007).CrossRef ADS r>
• 作者单位：D. R. Kazanov (1) r> V. H. Kaibyshev (1) r> V. Yu. Davydov (1) r> A. N. Smirnov (1) r> V. N. Jmerik (1) r> N. V. Kuznetsova (1) r> P. S. Kopiev (1) r> S. V. Ivanov (1) r> T. V. Shubina (1) r>r>1. Ioffe Physical–Technical Institute, Russian Academy of Sciences, St. Petersburg, 194021, Russia r>
• 刊物类别：Physics and Astronomy
• 刊物主题：Physicsr>Magnetism and Magnetic Materialsr>Electromagnetism, Optics and Lasersr>Russian Library of Sciencer>
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479

文摘

InN optical cavities supporting low-order whispering-gallery modes up to room temperature are formed by molecular-beam epitaxy on patterned substrates. The observed switching of the mode type with increasing temperature is explained in terms of changes in the optical parameters due to a shift of the absorption edge and modification of its shape. Modeling taking into account a variation in the refractive index reproduces the typical distributions of the electromagnetic-field intensity in the cavities. Original Russian Text ? D.R. Kazanov, V.H. Kaibyshev, V.Yu. Davydov, A.N. Smirnov, V.N. Jmerik, N.V. Kuznetsova, P.S. Kopiev, S.V. Ivanov, T.V. Shubina, 2015, published in Fizika i Tekhnika Poluprovodnikov, 2015, Vol. 49, No. 11, pp. 1484-488.