Investigation of physical properties and impedance spectroscopy study of Cu3SbS3 thin films

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• 作者：K. Nefzi ; A. Rabhi ; M. Kanzari
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：27
• 期：2
• 页码：1888-1896
• 全文大小：1,080 KB
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• 作者单位：K. Nefzi (1) (2) (3)
  A. Rabhi (1) (3)
  M. Kanzari (1) (2) (3)
  
  1. Ecole Nationale d’Ingénieurs de Tunis Laboratoire de Photovoltaïque et Matériaux Semi-conducteurs (LPMS), Université de Tunis El Manar (UTM), BP 37 le Belvédère, 1002, Tunis, Tunisia
  2. Département de Physique, Faculté des Sciences de Bizerte, 7021, Jarzouna, Bizerte, Tunisia
  3. Université de Tunis, IPEITunis Montfleury, Tunis, Tunisia
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Characterization and Evaluation Materials
  
• 出版者：Springer New York
• ISSN：1573-482X

文摘

Cu₃SbS₃ ingot material was successfully grown by direct melting of the constituent elements taken in stoichiometry compositions using high-purity copper, antimony and sulfide elements. Cu₃SbS₃ thin films were prepared by single source vacuum thermal evaporation method under vacuum (10−5 Torr) onto no heated glass substrates. The X-ray diffraction experimental data revealed that the Cu₃SbS₃ powder exhibiting an orthorhombic structure and lattice parameters a, b and c were calculated. It has been shown that the as-deposited Cu₃SbS₃ thin films were overall amorphous and the film thicknesses were around 400 nm. The absorption spectra of the films showed that the Cu₃SbS₃ compound is a direct band gap material and the gap value is closed to 1.46 eV. The as-deposited Cu₃SbS₃ films show absorption coefficients of about 2 × 105 cm−1 near the absorption edge. The as-deposited Cu₃SbS₃ films exhibit p-conductivity type by using hot probe method. A Schottky diode (Al/p-Cu₃SbS₃/Mo) was fabricated by simple deposition of pure Aluminum on the front side of the Cu₃SbS₃ thin film. I–V characteristics show that the Al makes Schottky contact with p-Cu₃SbS₃. Impedance spectroscopy technique was used to evaluate the conduction processes of the samples as a function of temperature (598–673 K) in the range 1 Hz–13 MHz. We found a decrease with temperature of the entire serial resistance R_s, the parallel resistance R_p and the capacitance C_p. In effort to modeling these results an equivalent electrical circuit was used. From the Arrhenius diagram, we estimated activation energy at 0.16 eV which represents the energy difference between the trap level and the valence band.