Possibility of room-temperature multiferroism in Mg-doped ZnO

详细信息    查看全文

• 作者：Parmod Kumar (1)
  Yogesh Kumar (2)
  Hitendra K. Malik (1)
  S. Annapoorni (3)
  Sanjeev Gautam (4)
  Keun Hwa Chae (4)
  K. Asokan (2)
  
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2014
• 出版时间：February 2014
• 年：2014
• 卷：114
• 期：2
• 页码：453-457
• 全文大小：537 KB
• 作者单位：Parmod Kumar (1)
  Yogesh Kumar (2)
  Hitendra K. Malik (1)
  S. Annapoorni (3)
  Sanjeev Gautam (4)
  Keun Hwa Chae (4)
  K. Asokan (2)
  
  1. Department of Physics, Indian Institute of Technology Delhi, New Delhi, 110016, India
  2. Materials Science Division, Inter University Accelerator Centre, New Delhi, 110067, India
  3. Department of Physics & Astrophysics, Delhi University, New Delhi, 110007, India
  4. Advanced Analysis Center, Korea Institute of Science and Technology (KIST), Seoul, 136-791, Republic of Korea
  
• ISSN：1432-0630

文摘

Room-temperature multiferroic properties in Mg-doped ZnO samples are reported wherein Mg replaces Zn in the ZnO matrix and retains hexagonal wurtzite structure. The saturation magnetisation is increased from ?×10??emu/g to 3×10??emu/g for the dilute doping of 2?% Mg in pure ZnO and the ferroelectricity is also increased. Higher concentration of Mg does not lead to a significant enhancement in the magnetisation but improves the ferroelectric properties. An X-ray absorption spectroscopic study shows an enhancement in O vacancies with dilute doping of Mg. The origin of the multiferroic behaviour is understood based on their crystal and electronic structures.