Wrinkle-free graphene with spatially uniform electrical properties grown on hot-pressed copper

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• 作者：Jeong Hun Mun ; Joong Gun Oh ; Jae Hoon Bong ; Hai Xu ; Kian Ping Loh…
• 关键词：CVD graphene ; graphene synthesis ; graphene wrinkle ; graphene field effect transistor
• 刊名：Nano Research
• 出版年：2015
• 出版时间：April 2015
• 年：2015
• 卷：8
• 期：4
• 页码：1075-1080
• 全文大小：2,161 KB
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• 作者单位：Jeong Hun Mun (1)
  Joong Gun Oh (1)
  Jae Hoon Bong (1)
  Hai Xu (2)
  Kian Ping Loh (2)
  Byung Jin Cho (1)
  
  1. Department of Electrical Engineering, KAIST, Daejeon, 305-701, Korea
  2. Department of Chemistry, National University of Singapore, Singapore, 117543, Singapore
  
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chinese Library of Science
  Chemistry
  Nanotechnology
  
• 出版者：Tsinghua University Press, co-published with Springer-Verlag GmbH
• ISSN：1998-0000

文摘

The chemical vapor deposition (CVD) of graphene on Cu substrates enables the fabrication of large-area monolayer graphene on desired substrates. However, during the transfer of the synthesized graphene, topographic defects are unavoidably formed along the Cu grain boundaries, degrading the electrical properties of graphene and increasing the device-to-device variability. Here, we introduce a method of hot-pressing as a surface pre-treatment to improve the thermal stability of Cu thin film for the suppression of grain boundary grooving. The flattened Cu thin film maintains its smooth surface even after the subsequent high temperature CVD process necessary for graphene growth, and the formation of graphene without wrinkles is realized. Graphene field effect transistors (FETs) fabricated using the graphene synthesized on hot-pressed Cu thin film exhibit superior field effect mobility and significantly reduced device-to-device variation.