On the tin impurity in the thermoelectric compound ZnSb: Charge-carrier generation and compensation

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• 作者：L. V. Prokofieva ; P. P. Konstantinov ; A. A. Shabaldin
• 刊名：Semiconductors
• 出版年：2016
• 出版时间：June 2016
• 年：2016
• 卷：50
• 期：6
• 页码：741-750
• 全文大小：447 KB
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Magnetism and Magnetic Materials
  Electromagnetism, Optics and Lasers
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1090-6479
• 卷排序：50

文摘

The technique for measuring the Hall coefficient and electrical conductivity in the thermal cycling mode is used to study the effect of the Sn impurity on the microstructure and properties of pressed ZnSb samples. Tin was introduced as an excess component (0.1 and 0.2 at %) and as a substitutional impurity for Zn and Sb atoms in a concentration of (2–2.5) at % The temperature dependences of the parameters of lightly doped samples are fundamentally like similar curves for ZnSb with 0.1 at % of Cu. The highest Hall concentration, 1.4 × 1019 cm–3 at 300 K, is obtained upon the introduction of 0.1 at % of Sn; the dimensionless thermoelectric figure of merit attains its maximum value of 0.85 at 660 K. The experimental data are discussed under the assumption of two doping mechanisms, which are effective in different temperature ranges, with zinc vacancies playing the decisive role of acceptor centers. In two ZnSb samples with SnSb and ZnSn additives, the charge-carrier compensation effect is observed; this effect depends on temperature and markedly changes with doping type. As in p-type AIV–BVI materials with a low Sn content, hole compensation can be attributed to atomic recharging Sn2+ → Sn4+. Types of compensating complexes are considered.Original Russian Text © L.V. Prokofieva, P.P. Konstantinov, A.A. Shabaldin, 2016, published in Fizika i Tekhnika Poluprovodnikov, 2016, Vol. 50, No. 6, pp. 757–766.