Influence of thermal annealing on structural properties and oxide charge of LiNbO3 films
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- 作者：M. Sumets ; A. Kostyuchenko ; V. Ievlev…
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2015
- 出版时间：October 2015
- 年：2015
- 卷：26
- 期：10
- 页码：7853-7859
- 全文大小：889 KB
- 参考文献：1.K. Nashimoto, M.J. Cima, P.C. McIntyre, W.E. Rhine, J. Mater. Res. 10, 2564 (1995)CrossRef
2.B.J. Curtis, H.R. Brunner, Mater. Res. Bull. 10, 515 (1975)CrossRef
3.S. Kondo, S. Miyazawa, S. Fusimi, K. Sugii, Appl. Phys. Lett. 26, 489 (1975)CrossRef
4.T.-H. Lee, F.-T. Hwang, C.-T. Lee, H.-Y. Lee, Mater. Sci. Eng. 136, 92 (2007)CrossRef
5.T. Nishida, M. Shimizu, T. Horiuchi, T. Shiosaki, K. Matsushige, Jpn. J. Appl. Phys. 34, 5113 (1995)CrossRef
6.V. Iyevlev, A. Kostyuchenko, M. Sumets, V. Vakhtel, J. Mater. Sci. Mater. Electron. 22, 1258 (2011)CrossRef
7.S. Margueron, A. Bartasyte, V. Plausinaitiene, A. Abrutis, P. Boulet, V. Kubilius, Z. Saltyte, Proc. SPIE 8626, 862612 (2013)CrossRef
8.D.G. Lim, B.S. Jang, S.I. Moon, C.Y. Won, J. Solid State Electron. 45, 1159 (2001)CrossRef
9.S. Shandilya, M. Tomar, K. Sreenivas, V. Gupta, J. Phys. D Appl. Phys. 42, 095303 (2009)CrossRef
10.N.S.L.S. Vasconcelos, J.S. Vasconcelos, V. Bouquet, S.M. Zanetti, E.R. Leite, E. Longo, L.E.B. Soledade, F.M. Pontes, M. Guilloux-Viry, A. Perrin et al., Thin Solid Films 436, 213 (2003)CrossRef
11.V.M. Ievlev, M.P. Sumets, A.V. Kostyuchenko, Mater. Sci. Forum 700, 53 (2012)CrossRef
12.D.A. Kiselev, R.N. Zhukov, A.S. Bykov, M.I. Voronova, K.D. Shcherbachev, M.D. Malinkovich, Y.N. Parkhomenko, Inorg. Mater. 50, 419 (2014)CrossRef
13.V. Ievlev, M. Sumets, A. Kostyuchenko, N. Bezryadin, J. Mater, Sci. Mater. Electron. 24, 1651 (2013)CrossRef
14.V. Edon, D. Re`miens, S. Saada, Appl. Surf. Sci. 256, 1455 (2009)CrossRef
15.A.Z. Simo藴es, M.A. Zaghete, B.D. Stojanovic, A.H. Gonzalez, J. Eur. Ceram. Soc. 24, 1607 (2004)CrossRef
16.F.J. Gordillo-Va麓zqueza, C.N. Afonso, J. Appl. Phys. 92, 7651 (2002)CrossRef
17.V. Ievlev, M. Sumets, A. Kostyuchenko, O. Ovchinnikov, V. Vakhtel, S. Kannykin, Thin Solid Films 542, 289 (2013)CrossRef
18.M. Sumets, V. Ievlev, A. Kostyuchenko, V. Vakhtel, S. Kannykin, A. Kobzev, Thin Solid Films 552, 32 (2014)CrossRef
19.Y. Kong, J. Xu, X. Chen, C. Zhang, W. Zhang, G. Zhang, J. Appl. Phys. 87, 4410 (2000)CrossRef
20.J. Blumel, E. Born, T. Metzger, J. Phys. Chem. Solids 55, 589 (1994)CrossRef
21.R.J. Esdaile, J. Appl. Phys. 58, 1070 (1985)CrossRef
22.H. Akazawa, M. Shimada, Phys. Stat. Sol. a 203, 2823 (2006)CrossRef
23.H. Akazawa, M. Shimada, J. Mater. Res. 22, 1726 (2007)CrossRef
24.D.M. Smyth, Ferroelectrics 50, 93 (1983)CrossRef
25.H. Donnerberg, S.M. Tomlinson, C.R.A. Catlow, O.F. Schirmer, Phys. Rev. B 40, 11909 (1989)CrossRef
26.M.V. Raymond, D.M. Smyth, J. Phys. Chem. Solids 57, 1507 (1996)CrossRef
27.U. G枚sele, T.Y. Tan, Appl. Phys. A 28, 79 (1982)CrossRef
28.U. G枚sele, Ann. Rev. Mater. Sci. 18, 257 (1988)CrossRef - 作者单位：M. Sumets (1) (2)
A. Kostyuchenko (2)
V. Ievlev (2)
S. Kannykin (2)
V. Dybov (2)
1. Center of Gravitational Wave Astronomy, University of Texas at Brownsville, 80 Fort Brown, Brownsville, TX, 78520, USA
2. Voronezh State University, Universitetskaya Square, 1, 394000, Voronezh, Russia - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials - 出版者：Springer New York
- ISSN：1573-482X
文摘
C-oriented polycrystalline lithium niobate (LiNbO3) films have been deposited on Si substrate by the radio-frequency magnetron sputtering method in an Ar atmosphere and Ar + O2 gas mixture. All as-grown LiNbO3 films manifested positive fixed oxide charge regardless of the sputtering conditions. Donor centers are formed in Si substrate because of diffusion of O2 molecules during sputtering process. Thermal annealing (TA) of the deposited films leads to increase in the surface roughness and grain size as well as formation of LiNb3O8 phase in the studied films. Also, TA resulting in the decline of positive oxide charge due to the diffusion of oxygen molecules into LiNbO3 films from air and out-diffusion from Si substrate.