Precision UV laser scribing for cleaving mirror facets of GaN-based laser diodes

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• 作者：O. Krüger ; J.-H. Kang ; M. Spevak ; U. Zeimer ; S. Einfeldt
• 刊名：Applied Physics A: Materials Science & Processing
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：122
• 期：4
• 全文大小：1,861 KB
• 参考文献：1.M.P. Mack, G.D. Via, A.C. Abare, M. Hansen, P. Kozodoy, S. Keller, J.S. Speck, U.K. Mishra, L.A. Coldren, S.P. DenBaars, Electron. Lett. 34, 1315 (1998)CrossRef
  2.W.S. Wong, T. Sands, N.W. Cheung, Appl. Phys. Lett. 72, 599 (1998)ADS CrossRef
  3.M.K. Kelly, O. Ambacher, R. Dimitrov, R. Handschuh, M. Stutzmann, Phys. Stat. Sol. 159, R3–R4 (1997)ADS CrossRef
  4.O. Ambacher, M.K. Kelly, C.R. Miskys, L. Hoppel, C. Nebel, M. Stutzmann, D. Kumar, D.P. Norton, C.B. Lee, K. Ebihara, X.X. Xi, in Materials Research Society Symposium Proceedings, vol. 617, ed. by D. Kumar, D.P. Norton, C.B. Lee, K. Ebihara, X.X. Xi (Mater. Res. Soc., USA, 2000) pp. J1–J12
  5.E. Gu, C.W. Jeon, H.W. Choi, G. Rice, M.D. Dawson, E.K. Illy, M.R.H. Knowles, Thin Solid Films 453–454, 462 (2004)CrossRef
  6.E. Gu, H. Howard, A. Conneely, G.M. O’Connor, E.K. Illy, M.R.H. Knowles, P.R. Edwards, R.W. Martin, I.M. Watson, M.D. Dawson, Appl. Surf. Sci. 252, 4897 (2006)ADS CrossRef
  7.T. Kim, H.S. Kim, M. Hetterich, D. Jones, J.M. Girkin, E. Bente, M.D. Dawson, Mater. Sci. Eng. B 82, 262 (2001)CrossRef
  8.K. Ozono, M. Obara, A. Usui, H. Sunakawa, Opt. Comm. 189, 103 (2001)ADS CrossRef
  9.W.M. Liu, R.Y. Zhu, S.X. Qian, S. Yuan, G.Y. Zhang, Chin. Phys. Lett. 19, 1711 (2002)ADS CrossRef
  10.J.R. van Look, S. Einfeldt, O. Kruger, V. Hoffmann, A. Knauer, M. Weyers, P. Vogt, M. Kneissl, I.E.E.E. Photon, Technol. Lett. 22, 416 (2010)CrossRef
  11.J. Rass, T. Wernicke, R. Kremzow, W. John, S. Einfeldt, P. Vogt, M. Weyers, M. Kneissl, Phys. Stat. Sol. 207, 1361 (2010)ADS CrossRef
  12.V. Hoffmann, A. Mogilatenko, C. Netzel, U. Zeimer, S. Einfeldt, M. Weyers, M. Kneissl, J. Cryst. Growth 391, 46 (2014)ADS CrossRef
  
• 作者单位：O. Krüger (1)
  J.-H. Kang (1)
  M. Spevak (1)
  U. Zeimer (1)
  S. Einfeldt (1)
  
  1. Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik (FBH), Gustav-Kirchhoff-Str. 4, 12489, Berlin, Germany
  
• 刊物类别：Physics and Astronomy
• 刊物主题：Physics
  Condensed Matter
  Optical and Electronic Materials
  Nanotechnology
  Characterization and Evaluation Materials
  Surfaces and Interfaces and Thin Films
  Operating Procedures and Materials Treatment
  
• 出版者：Springer Berlin / Heidelberg
• ISSN：1432-0630

文摘

Laser scribing with a nanosecond-pulsed UV laser operating at 355 nm was used to create precise perforation for die separation of GaN-based laser diodes. Machining depth of single- and multiple-pass scribing was investigated. For pulse energies between 1 and 45 µJ at a pulse repetition frequency of 20 kHz and single scan at 100 mm/min, scribe depths from 15 to 180 µm were obtained. Processing parameters were adjusted to minimize the formation of microcracks due to laser-induced local heating. By using the laser skip-and-scribe technique, the propagation of the cleavage plane could be controlled, irregular breaking could be minimized, and die yield could be improved. Smooth mirror facets with low density of terraces were formed by cleaving. In the vicinity of the laser-treated zone, no detrimental effects on the crystal quality of the multi-quantum wells could be detected by cathodoluminescence. The electro-optical characteristics of broad-area laser diodes fabricated by the laser-assisted process were similar to the ones fabricated using the conventional diamond-tip edge-scribing technique that suffers from low die yield. Our results demonstrate that nanosecond-pulsed UV laser scribing followed by cleaving is a powerful technique for the formation of mirror facets of GaN-based laser diodes.