Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF_plus-plus">2/Si/CaF_plus-plus">2 structures

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• 作者：A. A. Velichko ; V. A. Ilyushin ; A. U. Krupin…
• 关键词：reflection high ; energy electron diffraction ; molecular beam epitaxy ; oscillations ; silicon ; calcium fluoride ; nanostructure
• 刊名：Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques
• 出版年：2016
• 出版时间：September 2016
• 年：2016
• 卷：10
• 期：5
• 页码：912-916
• 全文大小：823 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Surfaces and Interfaces and Thin Films
  Russian Library of Science
  
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1819-7094
• 卷排序：10

文摘

The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF₂/Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF₂ layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.