Deposition of heteroepitaxial layers of topological insulator Bi2Se3 in the trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Al2Ob class="

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• 作者：P. I. Kuznetsov ; V. A. Luzanov…
• 刊名：Journal of Communications Technology and Electronics
• 出版年：2016
• 出版时间：February 2016
• 年：2016
• 卷：61
• 期：2
• 页码：183-189
• 全文大小：1,055 KB
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• 作者单位：P. I. Kuznetsov (1) <br> V. A. Luzanov (1) <br> G. G. Yakusheva (1) <br> A. G. Temiryazev (1) <br> B. S. Shchamkhalova (1) <br> V. A. Zhitov (1) <br> L. Yu. Zakharov (1) <br><br>1. Kotel’nikov Institute of Radio Engineering and Electronics (Fryazino Branch), Russian Academy of Sciences, pl. Vvedenskogo 1, Fryazino, Moscow oblast, 141190, Russia <br>
• 刊物类别：Engineering
• 刊物主题：Communications Engineering and Networks<br>Russian Library of Science<br>
• 出版者：MAIK Nauka/Interperiodica distributed exclusively by Springer Science+Business Media LLC.
• ISSN：1555-6557

文摘

Thin solid layers that are formed upon heating of the gaseous trimethylbismuth–isopropylselenide–hydrogen system on the (0001) Alb>2b>Ob>3b> and singular and vicinal (100) GaAs surfaces are studied. The conditions for deposition of metal Bi and phases of Bib>4b>Seb>3b>, BiSe, and topological insulator Bib>2b>Seb>3b> using the MOCVD method are determined. Pure metastable phase BiSe is obtained for the first time. Bib>2b>Seb>3b> films with a thickness of no less than 200 nm, a relatively low volume concentration of 3 ×1018 cm–3, and a high mobility of carriers at 300 K (1000 cm2 V–1 s–1) are fabricated.