Combined study on conductive AFM and damascene process to visualize Nano-Scaled defects in Cr thin films on polymer substrate

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• 作者：Eun-Wook Jeong (1)
  Se-Hun Kwon (1)
  Haedo Jeong (2)
  Youngson Choe (3)
  Young-Rae Cho (1)
  
  1. School of Materials Science and Engineering ; Pusan National University ; Busan ; 609-735 ; Korea
  2. School of Mechanical Engineering ; Pusan National University ; Busan ; 609-735 ; Korea
  3. Dept. of Chemical Engineering ; Pusan National University ; Busan ; 609-735 ; Korea
  
• 关键词：nano ; scaled defect ; C ; AFM ; damascene process ; direct observation ; thin film ; electrical conductivity
• 刊名：Electronic Materials Letters
• 出版年：2015
• 出版时间：January 2015
• 年：2015
• 卷：11
• 期：1
• 页码：164-169
• 全文大小：2,065 KB
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• 刊物类别：Chemistry and Materials Science
• 刊物主题：Condensed Matter Physics
  Electronics, Microelectronics and Instrumentation
  Optical and Electronic Materials
  Thermodynamics
  Characterization and Evaluation of Materials
  
• 出版者：The Korean Institute of Metals and Materials, co-published with Springer Netherlands
• ISSN：2093-6788

文摘

The evolution of a direct observation technique for small-sized defects in a thin film is important in understanding of a water-vapor barrier layers. An investigation into the availability of direct observation techniques for detecting nano-scaled defects in a chromium thin film on a polymer substrate was performed. The best images of nano-scaled defects in Cr thin films were obtained using conductive atomic force microscopy (C-AFM) in conjunction with a damascene process. When a dielectric Al2O3 layer was filled into the defects, such as voids or grain boundaries, in the Cr coating via this damascene process, a distinctive conductivity image was obtained from C-AFM. The major role of the dielectric material of the Al2O3 layer, when filled into the nano-scaled defects in the Cr coating, was the generation of different values in conductivity during the C-AFM analysis. The results confirmed that the combination of C-AFM and the filling of the dielectric Al2O3 layer into the defects via the damascene process is a useful method for the direct observation of nano-scaled defects comprised of deep and narrow trenches in metallic thin films on a polymer substrate.