Plasma-enhanced atomic layer deposition of tantalum nitride thin films using tertiary-amylimido-tris(dimethylamido)tantalum and hydrogen plasma

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• 作者：Ha-Jin Lee ; Jin-Seong Park ; Se-Hun Kwon
• 刊名：Journal of Electroceramics
• 出版年：2016
• 出版时间：June 2016
• 年：2016
• 卷：36
• 期：1-4
• 页码：165-169
• 全文大小：952 KB
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry
  Optical and Electronic Materials
  Ceramics,Glass,Composites,Natural Materials
  Characterization and Evaluation Materials
  Electrochemistry
  Crystallography
  
• 出版者：Springer Netherlands
• ISSN：1573-8663
• 卷排序：36

文摘

Plasma-enhanced atomic layer deposition (PEALD) of tantalum nitride (TaN) thin films was investigated at a growth temperature of 230 °C using an alternating supply of tertiary-amylimido-tris(dimethylamido)tantalum (TAIMATA, Ta[NC(CH₃)₂C₂H₅][N(CH₃)₂]₃) and hydrogen (H₂) plasma. As the H₂ plasma power increased from 75 to 175 W, the electrical resistivity of the films was improved from 1900 to 680 μΩ·cm, mainly due to the improved crystallinity. Moreover, the preferred orientation ratio between TaN (200) and TaN (111) planes also abruptly increased from 0.8 to 2.8 with increasing the H₂ plasma power. This preferred orientation change of the films from (111) to (200) improves the adhesion properties between Cu and TaN, while the Cu diffusion barrier performance was not significantly affected.KeywordsTantalum nitride thin filmsPlasma-enhanced atomic layer depositionPreferred orientationMicrostructureCopper diffusion barrier