Optimization of Thermoelectric Performance of Anisotropic Ag x Sn1↿em>x Se Compounds
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- 作者：Huaqian Leng ; Min Zhou ; Jie Zhao ; Yemao Han ; Laifeng Li
- 关键词：Thermoelectric performance ; SnSe ; anisotropy ; spark plasma sintering
- 刊名：Journal of Electronic Materials
- 出版年：2016
- 出版时间：January 2016
- 年：2016
- 卷：45
- 期：1
- 页码：527-534
- 全文大小：1,666 KB
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Min Zhou (1)
Jie Zhao (1) (2)
Yemao Han (1) (2)
Laifeng Li (1)
1. State Key Laboratory of Technologies in Space Cryogenic Propellants, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, China
2. University of Chinese Academy of Sciences, Beijing, China - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials
Electronics, Microelectronics and Instrumentation
Solid State Physics and Spectroscopy - 出版者：Springer Boston
- ISSN：1543-186X
文摘
SnSe is a promising thermoelectric material due to its ultralow thermal conductivity. However, stoichiometric SnSe compounds exhibit very low intrinsic defect concentration (3 × 1017 cm−3) and poor electrical transport properties, limiting the thermoelectric performance. In the present work, we investigated the effect of Ag dopant on the thermoelectric properties of SnSe. The results demonstrate that all the Ag x Sn1−lic ">x Se compounds exhibited anisotropic thermoelectric properties. The carrier concentration in the Ag x Sn1−lic ">x Se compounds greatly increased with increase of the Ag content, saturating at 1.9 × 1019 cm−3 for Ag0.01Sn0.99Se at room temperature. We found that a maximum zT value of 0.74 was obtained for Ag0.01Sn0.99Se perpendicular to the pressing direction at 823 K, being 23% higher than that of undoped SnSe (zT = 0.6).