Preparation of CuSbS2 Thin Films by Co-Sputtering and Solar Cell Devices with Band Gap-Adjustable n-Type InGaN as a Substitute of ZnO

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• 作者：Wei-Liang Chen ; Dong-Hau Kuo ; Thi Tran Anh Tuan
• 关键词：CuSbS2 ; co ; sputtering ; InGaN ; thin ; film solar cells
• 刊名：Journal of Electronic Materials
• 出版年：2016
• 出版时间：January 2016
• 年：2016
• 卷：45
• 期：1
• 页码：688-694
• 全文大小：1,487 KB
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• 作者单位：Wei-Liang Chen (1) <br> Dong-Hau Kuo (1) <br> Thi Tran Anh Tuan (1) <br><br>1. Department of Materials Science and Engineering, National Taiwan University of Science and Technology, Taipei, 10607, Taiwan <br>
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Chemistry<br>Optical and Electronic Materials<br>Characterization and Evaluation Materials<br>Electronics, Microelectronics and Instrumentation<br>Solid State Physics and Spectroscopy<br>
• 出版者：Springer Boston
• ISSN：1543-186X

文摘

CuSbSb>2b> films were fabricated by co-sputtering with the (Cu + Sbb>2b>Sb>3b>) target at powers of 50 W, 55 W, and 60 W and a Cu target at 2 W under the deposition temperature of 300°C for 2 h, followed by annealing at 350–450°C for 1 h under a Sbb>2b>Sb>3b> compensation disc to avoid the sulfur deficiency. The (Cu + Sbb>2b>Sb>3b>) cermet target with the composition of Cu:Sbb>2b>Sb>3b> = 2:1 was formed by hot pressing. The effects of processing conditions on the growth behavior, microstructural characteristics, and electrical properties of CuSbSb>2b> films were investigated. X-ray diffractometry showed that the films prepared by the (Cu + Sbb>2b>Sb>3b>) target at 50 W and 55 W were single phases. The peaks located at 28.4°, 28.7°, and 29.9° were contributed from the (111), (410), and (301) diffraction peaks, respectively. The film prepared with the (Cu + Sbb>2b>Sb>3b>) target at 60 W was Cu rich and had a high electrical conductivity of 180 S cm−1. The 55 W-deposited film was Cu stoichiometric and had low electrical conductivity of 0.05 S cm−1. The 50 W-deposited film with electrical conductivity of 0.24 S cm−1 was good for use as a solar cell device. The solar cell devices made of the p-CuSbSb>2b>/n-ZnO system had an efficiency of 0.16%, while it was 0.76% for the p-CuSbSb>2b>/n-Inb>0.3b>Gab>0.7b>N system with the InGaN made by reactive sputtering at 200°C instead of metal–organic chemical vapor deposition above 750°C. This replacement with InGaN for a solar cell device has led to a 4.75-fold increase in efficiency.