Growth of high quality CH3NH3PbI3 thin films prepared by modified dual-source vapor evaporation
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- 作者：Ping Fan ; Di Gu ; Guang-xing Liang…
- 刊名：Journal of Materials Science: Materials in Electronics
- 出版年：2016
- 出版时间：March 2016
- 年：2016
- 卷：27
- 期：3
- 页码：2321-2327
- 全文大小：1,840 KB
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Di Gu (1)
Guang-xing Liang (1) (2)
Ju-long Chen (1)
Jing-ting Luo (1) (2)
Yi-zhu Xie (1)
Zhuang-hao Zheng (1) (2)
Dong-ping Zhang (1) (2)
1. Institute of Thin Film Physics and Applications, College of Physics Science and Technology, Shenzhen University, Shenzhen, 518060, China
2. Shenzhen Key Laboratory of Sensor Technology, Shenzhen University, Shenzhen, 518060, China - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Optical and Electronic Materials
Characterization and Evaluation Materials - 出版者：Springer New York
- ISSN：1573-482X
文摘
In this work, a high quality CH3NH3PbI3 thin film prepared by modified dual-source vapor evaporation was proposed. An ultra-thin PbI2 layer was deposited firstly, and then CH3NH3I and PbI2 were evaporated simultaneously to form CH3NH3PbI3 thin film. The results show that flat, uniform, smooth, less porous and good crystallinity perovskite thin films without impure phase are formed by the modified dual-source vapor evaporation. The ratios of Pb/I accord with the nominal MAPbI3 stoichiometry and the band gaps are about 1.60 eV close to the theoretical value of 1.55 eV. The properties of CH3NH3PbI3 thin film fabricated by this method are suitable for perovskite solar cells applications.