Ultralow-power high-speed flip-flop based on multimode FinFETs
详细信息    查看全文
  • 作者:Kai Liao ; Xiaoxin Cui ; Nan Liao ; Tian Wang…
  • 刊名:SCIENCE CHINA Information Sciences
  • 出版年:2016
  • 出版时间:April 2016
  • 年:2016
  • 卷:59
  • 期:4
  • 全文大小:575 KB
  • 刊物类别:Computer Science
  • 刊物主题:Chinese Library of Science
    Information Systems and Communication Service
  • 出版者:Science China Press, co-published with Springer
  • ISSN:1869-1919
  • 卷排序:59
文摘
In this paper, we first reconstruct a novel planar static contention-free single-phase-clocked flipflop (S2CFF) based on high-performance fin-type field-effect transistors (FinFETs) to achieve high speed and ultralow power consumption. Benefiting from better control of the conductive channel, the shorted-gate (SG-mode) FinFET flip-flop obtains a persistent reduction of 56.7% in average power consumption as well as a considerable improvement in timing performance at a typical 10% data switching activity, while the low-power (LP-mode) FinFET flip-flop promotes the power reduction to 61.8% without appreciable degradation in speed. However, through further analysis of the simulation results, we have revealed an unnecessary energy loss caused by the redundant leaps of internal nodes at the static input ‘0’, which has a noticeable negative impact on total power consumption at low data switching activity. In order to overcome this defect, a conditional precharge technique is introduced to control the charging path, and we demonstrate that the independent-gate (IG-mode) FinFET is the best option for the added control transistor. The verification results indicate that our optimization reduces the power consumption by more than 50% at low data switching activity with an acceptable area and setup time penalty compared with that of LP-mode FinFET flip-flop.Keywordsmultimode FinFETflip-flopultralow-powerhigh-speedhigh-performance

© 2004-2018 中国地质图书馆版权所有 京ICP备05064691号 京公网安备11010802017129号

地址:北京市海淀区学院路29号 邮编:100083

电话:办公室:(+86 10)66554848;文献借阅、咨询服务、科技查新:66554700