Room temperature electroluminescence from n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction device grown by PLD

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• 作者：Lichun Zhang (1)
  Qingshan Li (1) (2)
  Feifei Wang (1)
  Chong Qu (1)
  Fengzhou Zhao (1)
  
• 关键词：light emitting diodes ; pulsed laser deposition ; electroluminescence ; n ; ZnO ; Ga ; p ; GaN ; Mg
• 刊名：Electronic Materials Letters
• 出版年：2014
• 出版时间：May 2014
• 年：2014
• 卷：10
• 期：3
• 页码：661-664
• 全文大小：
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• 作者单位：Lichun Zhang (1)
  Qingshan Li (1) (2)
  Feifei Wang (1)
  Chong Qu (1)
  Fengzhou Zhao (1)
  
  1. School of Physics and Optoelectronic Engineering, Ludong University, Yantai, 264025, China
  2. College of Physics and Engineering, Qufu Normal University, Qufu, 273165, China
  
• ISSN：2093-6788

文摘

The n-ZnO:Ga/p-GaN:Mg and n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated by the pulsed laser deposition (PLD) technique. The blue electroluminescence (EL) of the n-ZnO:Ga/p-GaN:Mg heterojunction LEDs is emitted mainly from the p-GaN layer instead of the n-ZnO:Ga layer, for the reason that the electron injection from n-ZnO:Ga prevailed over the hole injection from p-GaN:Mg due to the higher carrier concentration and carrier mobility in n-ZnO:Ga. On the other hand, the n-ZnO:Ga/i-ZnO/p-GaN:Mg heterojunction LEDs exhibited dominant ultraviolet-blue emission. The reason for this difference is attributed to the inserted undoped i-ZnO layer between n-ZnO:Ga and p-GaN:Mg, in which the holes from p-GaN:Mg and the electrons from n-ZnO:Ga are recombined.