Interface Microstructure and Performance of Sb Contacts in Bismuth Telluride-Based Thermoelectric Elements

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• 作者：Fei Li (1) (2)
  Xiangyang Huang (1)
  Wan Jiang (3)
  Lidong Chen (1)
  
• 关键词：Thermoelectric ; interlayer ; antimony ; contact resistivity
• 刊名：Journal of Electronic Materials
• 出版年：2013
• 出版时间：June 2013
• 年：2013
• 卷：42
• 期：6
• 页码：1219-1224
• 全文大小：637KB
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• 作者单位：Fei Li (1) (2)
  Xiangyang Huang (1)
  Wan Jiang (3)
  Lidong Chen (1)
  
  1. CAS Key Laboratory of Materials for Energy Conversion, Shanghai Institute of Ceramics, Chinese Academy of Sciences, 1295 Dingxi Road, Shanghai, 200050, China
  2. University of Chinese Academy of Sciences, 19 Yuquan Road, Beijing, 100049, China
  3. College of Material Science and Engineering, Donghua University, 2999 North Renmin Road, Songjiang, Shanghai, 201620, China
  
• ISSN：1543-186X

文摘

A thermoelectric joint composed of p-type Bi0.5Sb1.5Te3 (BiSbTe) material and an antimony (Sb) interlayer was fabricated by spark plasma sintering. The reliability of the thermoelectric joints was investigated using electron probe microanalysis for samples with different accelerated isothermal aging time. After aging for 30聽days at 300掳C in vacuum, the thickness of the diffusion layer at the BiSbTe/Sb interface was about 30聽渭m, and Sb2Te3 was identified to be the major interfacial compound by element analysis. The contact resistivity was 3聽脳聽10鈭?聽ohm聽cm2 before aging and increased to 8.5聽脳 10鈭?聽ohm聽cm2 after aging for 30聽days at 300掳C, an increase associated with the thickness of the interfacial compound. This contact resistivity is very small compared with that of samples with solder alloys as the interlayer. In addition, we have also investigated the interface behavior of Sb layers integrated with n-type Bi2Se0.3Te2.7 (BiSeTe) material, and obtained similar results as for the p-type semiconductor. The present study suggests that Sb may be useful as a new interlayer material for bismuth telluride-based power generation devices.