Effects of Mn doping on dielectric and ferroelectric characteristics of lead-free (K, Na, Li)NbO₃ thin films grown by chemical solution deposition

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• 作者：Xinxiu Zhang ; Jinsong Liu ; Kongjun Zhu…
• 刊名：Journal of Materials Science: Materials in Electronics
• 出版年：2017
• 出版时间：January 2017
• 年：2017
• 卷：28
• 期：1
• 页码：487-492
• 全文大小：
• 刊物类别：Chemistry and Materials Science
• 刊物主题：Optical and Electronic Materials; Characterization and Evaluation of Materials;
• 出版者：Springer US
• ISSN：1573-482X
• 卷排序：28

文摘

High-quality lead-free piezoelectric xMn-doped (K_0.48Na_0.52)_0.985Li_0.015NbO₃ films (KNLN; x = 0, 0.01, 0.02, 0.03) were successfully deposited onto Pt(111)/Ti/SiO₂/Si(100) substrates by sol–gel method. Effects of Mn substitution on the microstructure, dielectric properties, ferroelectric properties, and leakage current of the KNLN films were investigated in detail. Mn-doping can significantly improve the ferroelectric properties and decrease the leakage current of KNLN films. Optimal dielectric properties were obtained in films doped with 2 mol% Mn, whose dielectric constant and dielectric loss at 1 kHz were 875 and 0.030, respectively. In addition, well-saturated ferroelectric P-E hysteresis loop with large remanent polarization (2P_r) and coercive field (E_c) of 22.5 μC/cm2 and 65 kV/cm were obtained in 2 mol% Mn-doped KNLN film at an applied electric field of 200 kV/cm.