Intrinsic carrier concentration as a function of stress in (001), (101) and (111) biaxially-Strained-Si and Strained-Si1-x Ge x
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- 作者：Zhao Jin ; Liping Qiao ; Lidong Liu…
- 关键词：strain ; intrinsic carrier concentration ; KP theory ; density of state
- 刊名：Journal of Wuhan University of Technology--Materials Science Edition
- 出版年：2015
- 出版时间：October 2015
- 年：2015
- 卷：30
- 期：5
- 页码：888-893
- 全文大小：941 KB
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Liping Qiao (2)
Lidong Liu (1)
Zhili He (1)
Chen Guo (1)
Ce Liu (1)
1. School of Information Engineering, Chang’an University, Xi’an, 710064, China
2. School of Information Engineering, Xizang University for Nationalities, Xianyang, 712082, China - 刊物类别：Chemistry and Materials Science
- 刊物主题：Chemistry
Materials Science
Chinese Library of Science - 出版者：Wuhan University, co-published with Springer
- ISSN：1993-0437
文摘
Intrinsic carrier concentration (n i) is one of the most important physical parameters for understanding the physics of strained Si and Si1-x Ge x materials as well as for evaluating the electrical properties of Si-based strained devices. Up to now, the report on quantitative results of intrinsic carrier concentration in strained Si and Si1-x Ge x materials has been still lacking. In this paper, by analyzing the band structure of strained Si and Si1-x Ge x materials, both the effective densities of the state near the top of valence band and the bottom of conduction band (N c and N v) at 218, 330 and 393 K and the intrinsic carrier concentration related to Ge fraction (x) at 300 K were systematically studied within the framework of KP theory and semiconductor physics. It is found that the intrinsic carrier concentration in strained Si (001) and Si1-x Ge x (001) and (101) materials at 300 K increases significantly with increasing Ge fraction (x), which provides valuable references to understand the Si-based strained device physics and design. Keywords strain intrinsic carrier concentration KP theory density of state