A 10-Transistor 65 nm SRAM Cell Tolerant to Single-Event Upsets

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• 作者：Yuanqing Li ; Lixiang Li ; Yuan Ma ; Li Chen ; Rui Liu…
• 关键词：Alpha particle ; Proton ; Single event upset (SEU) ; Soft error rate (SER) ; SRAM
• 刊名：Journal of Electronic Testing
• 出版年：2016
• 出版时间：April 2016
• 年：2016
• 卷：32
• 期：2
• 页码：137-145
• 全文大小：744 KB
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• 作者单位：Yuanqing Li (1)
  Lixiang Li (2) (3)
  Yuan Ma (2)
  Li Chen (1)
  Rui Liu (1)
  Haibin Wang (1)
  Qiong Wu (4)
  Michael Newton (1)
  Mo Chen (1)
  
  1. Department of Electrical and Computer Engineering, University of Saskatchewan, Saskatoon, SK, Canada
  2. Department of Electrical and Computer Engineering, Dalhousie University, Halifax, NS, Canada
  3. TSMC Design Technology Canada, Kanata, ON, Canada
  4. College of Information and Control Engineering, China University of Petroleum, Qingdao, China
  
• 刊物类别：Engineering
• 刊物主题：Circuits and Systems
  Electronic and Computer Engineering
  Computer-Aided Engineering and Design
  
• 出版者：Springer Netherlands
• ISSN：1573-0727

文摘

A novel SRAM cell tolerant to single-event upsets (SEUs) is presented in this paper. By adding four more transistors inside, the proposed circuit can obtain higher critical charge at each internal node compared to the conventional 6-transistor (6T) cell. Arrays of 2k-bit capacitance of these two designs were implemented in a 65 nm CMOS bulk technology for comparison purpose. Radiation experiments showed that, at the nominal 1.0 V supply voltage, the proposed cell achieves 47.1 % and 49.3 % reduction in alpha and proton soft error rates (SER) with an area overhead of 37 %.