Structural and Carrier Dynamics of GaN and AlGaN-Based Double Heterostructures in the UV Region
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- 作者：Ponnusamy Arivazhagan (1)
Raju Ramesh (1)
Mathaiyan Jayasakthi (1)
Ravi Loganathan (1)
Manavaimaran Balaji (1)
Krishnan Baskar (1) - 关键词：MOCVD ; HRXRD ; gallium nitride ; aluminum gallium nitride ; TRPL
- 刊名：Journal of Electronic Materials
- 出版年：2013
- 出版时间：August 2013
- 年：2013
- 卷：42
- 期：8
- 页码：2486-2491
- 全文大小：563KB
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Raju Ramesh (1)
Mathaiyan Jayasakthi (1)
Ravi Loganathan (1)
Manavaimaran Balaji (1)
Krishnan Baskar (1)
1. Crystal Growth Centre, Anna University, Chennai, 600025, India
文摘
Aluminum gallium nitride-based double heterostructures with two different active layer widths have been grown on GaN templates by metalorganic chemical vapor deposition. Crystalline quality has been investigated using high-resolution x-ray diffraction analysis, and screw, edge, as well as total dislocation densities in the GaN epilayer have been calculated. The dislocation density of GaN has been found to be on the order of 108?cm?. The nominal Al composition and in-plane strain ε xx for the AlGaN layer grown on the GaN layer have been measured by asymmetric reciprocal-space mapping. Surface properties and cross-sectional views of the samples have been analyzed using atomic force microscopy (AFM) and field-emission scanning electron microscopy (FESEM), respectively. Room-temperature time-resolved photoluminescence and photoluminescence measurements have been performed on Al0.18Ga0.82N/Al0.45Ga0.55N double heterostructures and the GaN template. The interface recombination velocity (S) of AlGaN-based double heterostructures has been calculated using carrier decay time measurement, increasing from 8.7?×?103?cm/s to 13.4?×?103?cm/s with varying active layer thickness.