Theoretical analysis and simulation of InP-based uni-traveling-carrier photodetector

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• 作者：Sheng Xie (1)
  LiSa Liu (2)
  WenPing Kang (1)
  RuiLiang Song (1)
  LuHong Mao (1)
  ShiLin Zhang (1)
  
• 关键词：optoelectronics ; photodetector ; uni ; traveling ; carrier ; InP ; device simulation
• 刊名：Chinese Science Bulletin
• 出版年：2009
• 出版时间：October 2009
• 年：2009
• 卷：54
• 期：20
• 页码：3691-3696
• 全文大小：849KB
• 参考文献：1. Ishibashi T, Furuta T, Fushimi H, et al. InP/InGaAs unitraveling carrier photodiodes. IEICE Trans Electron, 2000, 83: 938-49
  2. Ito H, Kodama S, Muramoto Y, et al. High-speed and high-output InP-InGaAs uni-traveling-carrier photodiodes. IEEE J Sel Top Quantum Electron, 2004, 10: 709-27 CrossRef
  3. Wang X, Duan N, Chen H, et al. InGaAs-InP photodiodes with high responsivity and high saturation power. IEEE Photon Technol Lett, 2007, 19: 1272-274 CrossRef
  4. Chtioui M, Enard A, Carpentier D, et al. High-power high-Linearity uni-traveling-carrier photodiodes for analog photonic links. IEEE Photon Technol Lett, 2008, 20: 202-04 CrossRef
  5. Ishibashi T, Kodama S, Shimizu N, et al. High-speed response of uni-traveling-carrier photodiodes. Jpn J Appl Phys, 1997, 36: 6263-268 CrossRef
  6. Zhu H B, Mao L H, Yang Z, et al. Study of uni-traveling carrier pho todectors( in Chinese). Chinese J Semiconductor, 2006, 27: 2019-024
  7. Srivastava S, Roenker K P. Numerical modeling study of InP/InGaAs uni-traveling carrier photodiode. Solid-State Electron, 2004, 48: 461-70. CrossRef
  8. ATLAS Users Manual, Silvaco International, Santa Clara, 1997
  9. Shimizu N, Mori K, Ishibashi T, et al. Quantum efficiency of InP/InGaAs uni-traveling-carrier photodiodes at 1.55-.7μm measured using supercomtinum genertation in optical fiber. Jpn J Appl Phys, 1999, 38: 2573-576 CrossRef
  10. Shimizu N, Noriyuki W, Tomofumi F, et al. InP-InGaAs uni-traveling-carrier photodiode with improved 3 dB bandwidth of over 150 GHz. IEEE Photon Technol Lett, 1998, 10: 412-14 CrossRef
  11. Jun D H, Jang J H, Asesida I, et al. Improved efficiency band-width product of modified uni-traveling carrier photodiodes structures using an undoped photo-absorption layer. Jpn J Appl Phys, 2006, 45: 3475-478 CrossRef
  12. Adichi S. Physical Properties of III–V Semiconductor Compounds: InP, InAs, GaAs, GaP, InGaAs, and InGaAsP. New York: Wiley Interscience, 1992. 359-62 CrossRef
  
• 作者单位：Sheng Xie (1)
  LiSa Liu (2)
  WenPing Kang (1)
  RuiLiang Song (1)
  LuHong Mao (1)
  ShiLin Zhang (1)
  
  1. School of Electronic and Information Engineering, Tianjin University, Tianjin, 300072, China
  2. Institute of Physics, Nankai University, Tianjin, 300074, China
  
• ISSN：1861-9541

文摘

In this paper the photocurrent response of InP-based uni-traveling-carrier photodetectors (UTC-PDs) is analyzed using the drift-diffusion approach. Based on the theoretical analysis, an InP/InGaAs UTC-PD is modeled utilizing a numerical device simulator (ATLAS), and the physics of the device’s operation and its performance as a function of biasing and power level are simulated. The simulation results indicate that the linear dynamic range is up to 60 mW, the f ? dB is about 40 GHz and the full-width at half-maximum (FWHM) of the current pulse is 28 ps with 10 mW optical power injection for an optimized structure UTC-PD.