DC characteristics of lattice-matched InAlN/AlN/GaN high electron mobility transistors
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- 作者：Sheng Xie (1)
Zhihong Feng (2)
Bo Liu (2)
Shaobo Dun (2)
Luhong Mao (1)
Shilin Zhang (1) - 关键词：indium aluminum nitride ; gallium nitride ; sapphire ; metallorganic chemical vapor deposition ; high electron mobility transistor ; DC characteristic ; thermal aging
- 刊名：Transactions of Tianjin University
- 出版年：2013
- 出版时间：February 2013
- 年：2013
- 卷：19
- 期：1
- 页码：43-46
- 全文大小：521KB
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Zhihong Feng (2)
Bo Liu (2)
Shaobo Dun (2)
Luhong Mao (1)
Shilin Zhang (1)
1. School of Electronic Information Engineering, Tianjin University, Tianjin, 300072, China
2. Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang, 050051, China - ISSN：1995-8196
文摘
Lattice-matched InAlN/AlN/GaN high electron mobility transistors (HEMTs) grown on sapphire substrate by using low-pressure metallorganic chemical vapor deposition were prepared, and the comprehensive DC characteristics were implemented by Keithley 4200 Semiconductor Characterization System. The experimental results indicated that a maximum drain current over 400 mA/mm and a peak external transconductance of 215 mS/mm can be achieved in the initial HEMTs. However, after the devices endured a 10-h thermal aging in furnace under nitrogen condition at 300 °C, the maximum reduction of saturation drain current and external transconductance at high gate-source voltage and drain-source voltage were 30% and 35%, respectively. Additionally, an increased drain-source leakage current was observed at three-terminal off-state. It was inferred that the degradation was mainly related to electron-trapping defects in the InAlN barrier layer.